TY - GEN
T1 - A 6-10.6 GHz CMOS PA with common-gate as an input stage for UWB transmitters
AU - Murad, S. A.Z.
AU - Shahimim, M. M.
AU - Pokharel, R. K.
AU - Kanaya, H.
AU - Yoshida, K.
PY - 2011/12/1
Y1 - 2011/12/1
N2 - The design of a 6.0-10.6 GHz UWB CMOS power amplifier (PA) for ultra-wideband (UWB) transmitters in TSMC 0.18-μm CMOS technology is presented. The UWB PA proposed in this paper employing a common gate (CG) amplifier as the input stage for wideband matching and the current-reused technique is used to save the power consumption and to enhance gain at the higher frequency. The shunt peaking inductors were used to improve gain flatness and to increase the total bandwidth of the circuit. The post-layout simulation results show that the input return loss (S11) was less than -8 dB, output return loss (S22) was less than -10 dBm, and average gain was approximately 11 dB over the frequencies ranges of interest. The input and output 1-dB compression point is -12 dBm and 0 dBm, respectively. Moreover, an excellent phase linearity property (group delay) of ±55.8 ps across the whole band was obtained with power consumption of 18 mW. The chip area is 0.77 mm 2.
AB - The design of a 6.0-10.6 GHz UWB CMOS power amplifier (PA) for ultra-wideband (UWB) transmitters in TSMC 0.18-μm CMOS technology is presented. The UWB PA proposed in this paper employing a common gate (CG) amplifier as the input stage for wideband matching and the current-reused technique is used to save the power consumption and to enhance gain at the higher frequency. The shunt peaking inductors were used to improve gain flatness and to increase the total bandwidth of the circuit. The post-layout simulation results show that the input return loss (S11) was less than -8 dB, output return loss (S22) was less than -10 dBm, and average gain was approximately 11 dB over the frequencies ranges of interest. The input and output 1-dB compression point is -12 dBm and 0 dBm, respectively. Moreover, an excellent phase linearity property (group delay) of ±55.8 ps across the whole band was obtained with power consumption of 18 mW. The chip area is 0.77 mm 2.
UR - http://www.scopus.com/inward/record.url?scp=84856857152&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84856857152&partnerID=8YFLogxK
U2 - 10.1109/TENCON.2011.6129177
DO - 10.1109/TENCON.2011.6129177
M3 - Conference contribution
AN - SCOPUS:84856857152
SN - 9781457702556
T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON
SP - 607
EP - 610
BT - TENCON 2011 - 2011 IEEE Region 10 Conference
T2 - 2011 IEEE Region 10 Conference: Trends and Development in Converging Technology Towards 2020, TENCON 2011
Y2 - 21 November 2011 through 24 November 2011
ER -