A case study of Short Term Cell-Flipping technique for mitigating NBTI degradation on cache

Yuji Kunitake, Toshinori Sato, Hiroto Yasuura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

Negative Bias Temperature Instability (NBTI) is one of the major reliability problems in advanced technologies. NBTI causes threshold voltage shift in a PMOS transistor which is biased to negative voltage. In an SRAM cell, due to NBTI, threshold voltage shifts in the load transistors. The degradation has the impact on Static Noise Margin (SNM), which is a measure of read stability of a 6-T SRAM cell. Because an SRAM cell consists of two inverters, one of the load transistors is always stressed. In order to mitigate NBTI degradation, we proposed Short Term Cell-Flipping technique (STCF) for SRAM cell. This technique makes the stress probability on load transistors in an SRAM cell close to 50%. In this paper, we apply STCF technique to cache memories, and discuss its potential to mitigate NBTI degradation.

Original languageEnglish
Title of host publicationProceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010
Pages301-307
Number of pages7
DOIs
Publication statusPublished - 2010
Event2nd Asia Symposium on Quality Electronic Design, ASQED 2010 - Penang, Malaysia
Duration: Aug 3 2010Aug 4 2010

Other

Other2nd Asia Symposium on Quality Electronic Design, ASQED 2010
CountryMalaysia
CityPenang
Period8/3/108/4/10

Fingerprint

Static random access storage
Transistors
Degradation
Threshold voltage
Cache memory
Loads (forces)
Negative bias temperature instability
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Kunitake, Y., Sato, T., & Yasuura, H. (2010). A case study of Short Term Cell-Flipping technique for mitigating NBTI degradation on cache. In Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010 (pp. 301-307). [5548256] https://doi.org/10.1109/ASQED.2010.5548256

A case study of Short Term Cell-Flipping technique for mitigating NBTI degradation on cache. / Kunitake, Yuji; Sato, Toshinori; Yasuura, Hiroto.

Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010. 2010. p. 301-307 5548256.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kunitake, Y, Sato, T & Yasuura, H 2010, A case study of Short Term Cell-Flipping technique for mitigating NBTI degradation on cache. in Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010., 5548256, pp. 301-307, 2nd Asia Symposium on Quality Electronic Design, ASQED 2010, Penang, Malaysia, 8/3/10. https://doi.org/10.1109/ASQED.2010.5548256
Kunitake Y, Sato T, Yasuura H. A case study of Short Term Cell-Flipping technique for mitigating NBTI degradation on cache. In Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010. 2010. p. 301-307. 5548256 https://doi.org/10.1109/ASQED.2010.5548256
Kunitake, Yuji ; Sato, Toshinori ; Yasuura, Hiroto. / A case study of Short Term Cell-Flipping technique for mitigating NBTI degradation on cache. Proceedings of the 2nd Asia Symposium on Quality Electronic Design, ASQED 2010. 2010. pp. 301-307
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