A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system

Yuki Yamashita, Daisuke Kanemoto, Haruichi Kanaya, Ramesh Pokharel, Keiji Yoshida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

This paper describes the design of a high-efficient class-E power amplifier (PA) for 5-GHz wireless transmitter applications using constant envelope modulation scheme in a 0.18-μm CMOS technology. The proposed class-E PA employs injection-locking technique to reduce required input power. Furthermore, cascode topology is utilized for the proposed PA in order to reduce device stress and parasitic capacitances. The proposed PA delivers 15.4-dBm saturated output power at 5.0 GHz with 40.6-% maximum power-added efficiency (PAE) for measurement.

Original languageEnglish
Title of host publication2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013
Pages66-68
Number of pages3
DOIs
Publication statusPublished - 2013
Event2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013 - Austin, TX, United States
Duration: Jan 21 2013Jan 23 2013

Other

Other2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013
CountryUnited States
CityAustin, TX
Period1/21/131/23/13

Fingerprint

Power amplifiers
Modulation
Transmitters
Capacitance
Topology

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Yamashita, Y., Kanemoto, D., Kanaya, H., Pokharel, R., & Yoshida, K. (2013). A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013 (pp. 66-68). [6489434] https://doi.org/10.1109/SiRF.2013.6489434

A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system. / Yamashita, Yuki; Kanemoto, Daisuke; Kanaya, Haruichi; Pokharel, Ramesh; Yoshida, Keiji.

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. p. 66-68 6489434.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamashita, Y, Kanemoto, D, Kanaya, H, Pokharel, R & Yoshida, K 2013, A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system. in 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013., 6489434, pp. 66-68, 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - 2013 7th IEEE Radio and Wireless Week, RWW 2013, Austin, TX, United States, 1/21/13. https://doi.org/10.1109/SiRF.2013.6489434
Yamashita Y, Kanemoto D, Kanaya H, Pokharel R, Yoshida K. A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system. In 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. p. 66-68. 6489434 https://doi.org/10.1109/SiRF.2013.6489434
Yamashita, Yuki ; Kanemoto, Daisuke ; Kanaya, Haruichi ; Pokharel, Ramesh ; Yoshida, Keiji. / A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system. 2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2013 - RWW 2013. 2013. pp. 66-68
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