A crystalline germanium flexible thin-film transistor

H. Higashi, M. Nakano, K. Kudo, Y. Fujita, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, K. Hamaya

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C. A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

Original languageEnglish
Article number222105
JournalApplied Physics Letters
Volume111
Issue number22
DOIs
Publication statusPublished - Nov 27 2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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