A crystalline germanium flexible thin-film transistor

H. Higashi; M. Nakano; K. Kudo; Y. Fujita; S. Yamada; T. Kanashima; I. Tsunoda; H. Nakashima; K. Hamaya

doi:10.1063/1.5007828

A crystalline germanium flexible thin-film transistor

H. Higashi, M. Nakano, K. Kudo, Y. Fujita, S. Yamada, T. Kanashima, I. Tsunoda, H. Nakashima, K. Hamaya

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Abstract

We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C. A field-effect mobility (μ_FE) of 10.7 cm²/Vs is obtained, meaning the highest μ_FE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

Original language	English
Article number	222105
Journal	Applied Physics Letters
Volume	111
Issue number	22
DOIs	https://doi.org/10.1063/1.5007828
Publication status	Published - Nov 27 2017

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.5007828

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title = "A crystalline germanium flexible thin-film transistor",

abstract = "We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C. A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.",

author = "H. Higashi and M. Nakano and K. Kudo and Y. Fujita and S. Yamada and T. Kanashima and I. Tsunoda and H. Nakashima and K. Hamaya",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Challenging Exploratory Research (Grant No. 15K13948) from JSPS and Grant-in-Aid for Scientific Research (A) (Grant Nos. 25889041 and 16H02333) from JSPS. H.H. acknowledges JSPS Research Fellowships for Young Scientists. Publisher Copyright: {\textcopyright} 2017 Author(s).",

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T1 - A crystalline germanium flexible thin-film transistor

AU - Higashi, H.

AU - Nakano, M.

AU - Kudo, K.

AU - Fujita, Y.

AU - Yamada, S.

AU - Kanashima, T.

AU - Tsunoda, I.

AU - Nakashima, H.

AU - Hamaya, K.

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Challenging Exploratory Research (Grant No. 15K13948) from JSPS and Grant-in-Aid for Scientific Research (A) (Grant Nos. 25889041 and 16H02333) from JSPS. H.H. acknowledges JSPS Research Fellowships for Young Scientists. Publisher Copyright: © 2017 Author(s).

PY - 2017/11/27

Y1 - 2017/11/27

N2 - We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C. A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

AB - We experimentally demonstrate a flexible thin-film transistor (TFT) with (111)-oriented crystalline germanium (Ge) layers grown by a gold-induced crystallization method. Accumulation-mode metal source/drain p-channel Ge TFTs are fabricated on a polyimide film at ≤ 400 ° C. A field-effect mobility (μFE) of 10.7 cm2/Vs is obtained, meaning the highest μFE in the p-TFTs fabricated at ≤ 400 ° C on flexible plastic substrates. This study will lead to high-performance flexible electronics based on an inorganic-semiconductor channel.

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A crystalline germanium flexible thin-film transistor

Abstract

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