A DC-2.5 GHz high linearity CMOS attenuator in a 0.18μm technology

Ibrahim L. Abdalla, Hongting Jia, Ramesh Pokharel

Research output: Contribution to journalConference article

Abstract

A CMOS attenuator with high linearity has been designed and measured in a 0.18-μm CMOS process, to be used for a variable gain amplifier of RF wireless transceiver. The design is based on four cascaded Bridge-T attenuator stages that are consecutively activated to adjust the attenuation level and improve linearity. The design operates in the frequency band of DC-2.5 GHz with 2 - 3.5 dB insertion loss and 14 dB maximum attenuation in the entire frequency range. Measured and simulated results are in good agreement over the frequency band of interest. Measured worst case S11 and S22 are -10 and -8.8 dB, respectively, across the frequency band. The measured 1-dB compression point is +22 dBm at maximum-attenuation.

Original languageEnglish
Pages (from-to)591-597
Number of pages7
JournalProcedia Manufacturing
Volume22
DOIs
Publication statusPublished - Jan 1 2018
Event11th International Conference on Interdisciplinarity in Engineering, INTER-ENG 2017 - Tirgu Mures, Romania
Duration: Oct 5 2017Oct 6 2017

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Frequency bands
Insertion losses
Transceivers
Variable gain amplifiers

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Artificial Intelligence

Cite this

A DC-2.5 GHz high linearity CMOS attenuator in a 0.18μm technology. / Abdalla, Ibrahim L.; Jia, Hongting; Pokharel, Ramesh.

In: Procedia Manufacturing, Vol. 22, 01.01.2018, p. 591-597.

Research output: Contribution to journalConference article

Abdalla, Ibrahim L. ; Jia, Hongting ; Pokharel, Ramesh. / A DC-2.5 GHz high linearity CMOS attenuator in a 0.18μm technology. In: Procedia Manufacturing. 2018 ; Vol. 22. pp. 591-597.
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