A DC-to-100-GHz InP HEMT 1: 2 Distributor IC using distributed amplification

Yuhki Imai, Shunji Kimura, Takatomo Enoki, Yohtaro Umeda

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

This letter describes a 1 : 2 distributor IC for future very-high-speed optical communication systems. Wideband performance is obtained by applying a distributed amplification technique to a differential circuit. This IC uses a 0.1-μm-gate-length InAlAs/InGaAs/InP HEMT and a coplanar-waveguide technology. It has a 3-dB bandwidth of 100 GHz with a low-frequency gain of -2.5 dB. Up to 100 GHz, return loss and isolation are better than -10 dB and -20 dB. We believe the bandwidth is the widest ever reported for multi-RF-port wideband IC's.

Original languageEnglish
Pages (from-to)256-258
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume6
Issue number7
DOIs
Publication statusPublished - Jul 1 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'A DC-to-100-GHz InP HEMT 1: 2 Distributor IC using distributed amplification'. Together they form a unique fingerprint.

  • Cite this