This letter describes a 1 : 2 distributor IC for future very-high-speed optical communication systems. Wideband performance is obtained by applying a distributed amplification technique to a differential circuit. This IC uses a 0.1-μm-gate-length InAlAs/InGaAs/InP HEMT and a coplanar-waveguide technology. It has a 3-dB bandwidth of 100 GHz with a low-frequency gain of -2.5 dB. Up to 100 GHz, return loss and isolation are better than -10 dB and -20 dB. We believe the bandwidth is the widest ever reported for multi-RF-port wideband IC's.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)