A dc-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 µm InAlAs/InGaAs low-noise HEMT’s with 155 GHz fTand 234 GHz f/max. The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces. The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth. A multichip module loaded with two amplifier IC’s in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz. The 1 dB gain compression output power is about 5 dBm for both modules. The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range.
|Number of pages||8|
|Journal||IEEE Journal of Solid-State Circuits|
|Publication status||Published - Dec 1994|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering