A Design Technique for a 60 GHz-Bandwidth Distributed Baseband Amplifier IC Module

Tsugumichi Shibata; Shunji Kimura; Yuhki Imai; Yohtaro Umeda; Yukio Akazawa

doi:10.1109/4.340428

A Design Technique for a 60 GHz-Bandwidth Distributed Baseband Amplifier IC Module

Tsugumichi Shibata, Shunji Kimura, Yuhki Imai, Yohtaro Umeda, Yukio Akazawa

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A dc-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 µm InAlAs/InGaAs low-noise HEMT’s with 155 GHz fTand 234 GHz f/max. The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces. The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth. A multichip module loaded with two amplifier IC’s in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz. The 1 dB gain compression output power is about 5 dBm for both modules. The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range.

Original language	English
Pages (from-to)	1537-1544
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/4.340428
Publication status	Published - Dec 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/4.340428

Cite this

@article{d4d3a33f572440a49060431040f47b22,

title = "A Design Technique for a 60 GHz-Bandwidth Distributed Baseband Amplifier IC Module",

abstract = "A dc-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 µm InAlAs/InGaAs low-noise HEMT{\textquoteright}s with 155 GHz fTand 234 GHz f/max. The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces. The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth. A multichip module loaded with two amplifier IC{\textquoteright}s in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz. The 1 dB gain compression output power is about 5 dBm for both modules. The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range.",

author = "Tsugumichi Shibata and Shunji Kimura and Yuhki Imai and Yohtaro Umeda and Yukio Akazawa",

year = "1994",

month = dec,

doi = "10.1109/4.340428",

language = "English",

volume = "29",

pages = "1537--1544",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - A Design Technique for a 60 GHz-Bandwidth Distributed Baseband Amplifier IC Module

AU - Shibata, Tsugumichi

AU - Kimura, Shunji

AU - Imai, Yuhki

AU - Umeda, Yohtaro

AU - Akazawa, Yukio

PY - 1994/12

Y1 - 1994/12

N2 - A dc-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 µm InAlAs/InGaAs low-noise HEMT’s with 155 GHz fTand 234 GHz f/max. The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces. The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth. A multichip module loaded with two amplifier IC’s in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz. The 1 dB gain compression output power is about 5 dBm for both modules. The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range.

AB - A dc-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 µm InAlAs/InGaAs low-noise HEMT’s with 155 GHz fTand 234 GHz f/max. The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces. The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth. A multichip module loaded with two amplifier IC’s in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz. The 1 dB gain compression output power is about 5 dBm for both modules. The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range.

UR - http://www.scopus.com/inward/record.url?scp=0028753565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028753565&partnerID=8YFLogxK

U2 - 10.1109/4.340428

DO - 10.1109/4.340428

M3 - Article

AN - SCOPUS:0028753565

SN - 0018-9200

VL - 29

SP - 1537

EP - 1544

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 12

ER -

A Design Technique for a 60 GHz-Bandwidth Distributed Baseband Amplifier IC Module

Abstract

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