A Design Technique for a 60 GHz-Bandwidth Distributed Baseband Amplifier IC Module

Tsugumichi Shibata, Shunji Kimura, Yuhki Imai, Yohtaro Umeda, Yukio Akazawa

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

A dc-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 µm InAlAs/InGaAs low-noise HEMT’s with 155 GHz fTand 234 GHz f/max. The device is mounted in a metal package with 1.8 mm coaxial cable signal interfaces. The package is specially designed using three-dimensional electromagnetic field analyses, resulting in very flat frequency characteristics of the module within 1.5 dB gain ripples over the entire bandwidth. A multichip module loaded with two amplifier IC’s in cascade is also fabricated, and operates at a 17.5 dB gain from 60 kHz to 48 GHz. The 1 dB gain compression output power is about 5 dBm for both modules. The noise figure of the single-chip module is approximately 4 dB over a 10-40 GHz frequency range.

Original languageEnglish
Pages (from-to)1537-1544
Number of pages8
JournalIEEE Journal of Solid-State Circuits
Volume29
Issue number12
DOIs
Publication statusPublished - Dec 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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