A far-infrared sensor with a subwavelength structured absorber

Yoshimi Ohta, Yoshikazu Arakawa, Takafumi Fukumoto, Yasuhiro Fukuyama, Masaki Hirota

Research output: Contribution to journalArticlepeer-review

Abstract

A thermoelectric far-infrared sensor with a subwavelength structured (SWS) absorber is presented. The sensor has a low cost potential because it is fabricated with the conventional CMOS manufacturing process and micromachining technology. To increase the responsivity of the sensor, we have developed the SWS absorber that has high infrared absorptivity of more than 80 %. The sensor achieved high responsivity of 3,900 VAV. The sensor has external dimensions of 100 μm × 100 μn. The fabricated SWS absorber has 4 μn pitch and 1.9 μm height. The SWS absorber effectively reduces surface reflection loss over a wide spectral region and enhances the absorptivity. We observed that the sensor with the SWS absorber had 20 % higher responsivity than that with the flat surfaced absorber. Copy; 2010 The Institute of Electrical Engineers of Japan.

Original languageEnglish
JournalIEEJ Transactions on Sensors and Micromachines
Volume130
Issue number7
DOIs
Publication statusPublished - Aug 18 2010
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A far-infrared sensor with a subwavelength structured absorber'. Together they form a unique fingerprint.

Cite this