Abstract
We present studies on the electronic transport in a quantum dot based on a back-gated undoped GaAs/AlGaAs heterostructure. A high-quality two-dimensional electron gas can be induced in the structure by applying a back-gate voltage. The quantum dot is well defined by means of a single metallic frontgate. We observe clear regions of Coulomb blockade and pronounced tunneling peaks in a broad range of source-drain and front-gate voltages. The formation of the quantum dot and energetic evolution of the associated tunneling peaks are studied as a function of the applied front-gate voltage. Excellent agreement to the calculated Coulomb diamond pattern using the 'constant interaction model' is achieved, if a front-gate voltage dependent change of the dot capacitance is taken into account.
Original language | English |
---|---|
Pages (from-to) | 1317-1320 |
Number of pages | 4 |
Journal | Physica Status Solidi C: Conferences |
Issue number | 4 |
DOIs | |
Publication status | Published - 2003 |
Externally published | Yes |
Event | 2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan Duration: Sep 30 2002 → Oct 3 2002 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics