A formation mechanism of carbon nanotube films on SiC(0001)

M. Kusunoki, T. Suzuki, T. Hirayama, N. Shibata, Kenji Kaneko

Research output: Contribution to journalArticle

183 Citations (Scopus)

Abstract

We report a remarkable difference of decomposed structures on the Si(0001) and C(0001̄ faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after heating at 1700 °C for half an hour in a vacuum. On the contrary, a very thin layer of graphite sheets parallel to the surface was formed on the Si face under the same condition. It is proposed that the growth of CNTs is determined by the generation of nanocaps at the initial stage, by comparing the difference of the decomposition mechanisms on the both faces.

Original languageEnglish
Pages (from-to)531-533
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number4
DOIs
Publication statusPublished - Jul 24 2000
Externally publishedYes

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carbon nanotubes
electron microscopy
graphite
decomposition
vacuum
heating
high resolution
single crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

A formation mechanism of carbon nanotube films on SiC(0001). / Kusunoki, M.; Suzuki, T.; Hirayama, T.; Shibata, N.; Kaneko, Kenji.

In: Applied Physics Letters, Vol. 77, No. 4, 24.07.2000, p. 531-533.

Research output: Contribution to journalArticle

Kusunoki, M, Suzuki, T, Hirayama, T, Shibata, N & Kaneko, K 2000, 'A formation mechanism of carbon nanotube films on SiC(0001)', Applied Physics Letters, vol. 77, no. 4, pp. 531-533. https://doi.org/10.1063/1.127034
Kusunoki, M. ; Suzuki, T. ; Hirayama, T. ; Shibata, N. ; Kaneko, Kenji. / A formation mechanism of carbon nanotube films on SiC(0001). In: Applied Physics Letters. 2000 ; Vol. 77, No. 4. pp. 531-533.
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