A fully integrated CMOS up-conversion mixer with input active balun for wireless applications

S. A Z Murad, M. Mohamad Shahimin, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper presents a fully integrated CMOS up-conversion mixer with input active balun at 5.2 GHz for wireless applications. The design based on Gilbert-cell active double-balanced mixer with integrated on-chip input active balun is proposed by using TSMC 0.18 m technology. Core mixer employs derivative superposition method to obtain high linearity. A designed active balun which converts single-ended input to differential signals for intermediate frequency (IF) signal is designed and integrated with core mixer. The up-conversion mixer converts an input of 100 MHz IF signal to an output of 5.2 GHz radio frequency (RF) signal with a local oscillator (LO) frequency of 5.1 GHz. The simulation results indicated that the proposed method shows 8-dBm higher input third order intercept point (IIP3) than the conventional mixer. From the simulation results, the mixer achieves an IIP3 of 8-dBm, conversion gain of 4.5-dB, and consumes only 2.48-mW power at 1.8-V power supply.

Original languageEnglish
Title of host publication2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
Pages112-116
Number of pages5
DOIs
Publication statusPublished - 2011
Event2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah, Malaysia
Duration: Sep 28 2011Sep 30 2011

Other

Other2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
CountryMalaysia
CityKota Kinabalu, Sabah
Period9/28/119/30/11

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Murad, S. A. Z., Shahimin, M. M., Pokharel, R., Kanaya, H., & Yoshida, K. (2011). A fully integrated CMOS up-conversion mixer with input active balun for wireless applications. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts (pp. 112-116). [6088304] https://doi.org/10.1109/RSM.2011.6088304