Abstract
More than Moore ηtrade; captures a concept for overcoming limitationsin silicon electronics by incorporating new functionalitiesin the constituent materials. Perovskite oxides are candidates because of their vast array of physical properties in a common structure. They also enable new electronic devices based on strongly-correlated electrons. The field effect transistor and its derivatives have been the principal oxide devices investigated thus far, but another option is available in a different geometry: if the current is perpendicular to the interface, the strong internal electric fields generated at back-to-back heterojunctions can be used for oxide electronics, analogous to bipolar transistors. Here we demonstrate a perovskite heteroepitaxial metal-base transistor operating at room temperature, enabled by interface dipole engineering. Analysis of many devices quantifies the evolution from hot-electron to permeable-base behaviour. This device provides a platform for incorporating the exotic ground states of perovskite oxides, as well as novel electronic phases at their interfaces.
Original language | English |
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Pages (from-to) | 198-201 |
Number of pages | 4 |
Journal | Nature Materials |
Volume | 10 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2011 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering