A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology

H. Mosalam, A. Allam, Adel Abdel-Rahman, T. Kaho, Hongting Jia, Ramesh Pokharel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the design and implementation of a 21- 26.5 GHz broadband, two stages CMOS power amplifier (PA) for quasi-millimeter wave band wireless communication systems. The proposed PA is designed using staggered tuning method [1], which is employed for the first time in quasi-millimeter wave band. Moreover, source and load-pull simulation, in addition to, impedance analysis are employed to optimize the input, output, and inter-stage impedance matching circuits for maximum power added efficiency (PAE) and better linearity. The measurement results on a chip fabricated using 0.18 μm CMOS technology shows a power gain of 10.2 ± 0.8 dB, a maximum PAE and output gain compression point (POut1dB ) of 10.5 dBm and 18 %, respectively, at 24 GHz while consuming 42 mW only. In addition, the PA achieved excellent low measured group delay variations of 75 ± 22 ps.

Original languageEnglish
Title of host publication2016 IEEE 59th International Midwest Symposium on Circuits and Systems, MWSCAS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509009169
DOIs
Publication statusPublished - Mar 2 2017
Event59th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2016 - Abu Dhabi, United Arab Emirates
Duration: Oct 16 2016Oct 19 2016

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746

Other

Other59th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2016
CountryUnited Arab Emirates
CityAbu Dhabi
Period10/16/1610/19/16

Fingerprint

Power amplifiers
Millimeter waves
Group delay
Communication systems
Tuning
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Mosalam, H., Allam, A., Abdel-Rahman, A., Kaho, T., Jia, H., & Pokharel, R. (2017). A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology. In 2016 IEEE 59th International Midwest Symposium on Circuits and Systems, MWSCAS 2016 [7870065] (Midwest Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSCAS.2016.7870065

A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology. / Mosalam, H.; Allam, A.; Abdel-Rahman, Adel; Kaho, T.; Jia, Hongting; Pokharel, Ramesh.

2016 IEEE 59th International Midwest Symposium on Circuits and Systems, MWSCAS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. 7870065 (Midwest Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mosalam, H, Allam, A, Abdel-Rahman, A, Kaho, T, Jia, H & Pokharel, R 2017, A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology. in 2016 IEEE 59th International Midwest Symposium on Circuits and Systems, MWSCAS 2016., 7870065, Midwest Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., 59th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2016, Abu Dhabi, United Arab Emirates, 10/16/16. https://doi.org/10.1109/MWSCAS.2016.7870065
Mosalam H, Allam A, Abdel-Rahman A, Kaho T, Jia H, Pokharel R. A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology. In 2016 IEEE 59th International Midwest Symposium on Circuits and Systems, MWSCAS 2016. Institute of Electrical and Electronics Engineers Inc. 2017. 7870065. (Midwest Symposium on Circuits and Systems). https://doi.org/10.1109/MWSCAS.2016.7870065
Mosalam, H. ; Allam, A. ; Abdel-Rahman, Adel ; Kaho, T. ; Jia, Hongting ; Pokharel, Ramesh. / A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology. 2016 IEEE 59th International Midwest Symposium on Circuits and Systems, MWSCAS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. (Midwest Symposium on Circuits and Systems).
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