TY - GEN
T1 - A High PAE Stacked K-band Power Amplifier Using π-Phase Compensation Technique
AU - Alngar, Omar Z.
AU - Barakat Adel Tawfik, Mohamed Mohamed
AU - Pokharel, Ramesh K.
N1 - Funding Information:
The researcher, Omar Z. Alngar, is funded by a full scholarship from the Ministry of Higher Education of the Arab Republic of Egypt.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - A three-Tunable low-pass π-phase compensator technique is proposed and employed in a K-band CMOS power amplifier (PA) to solve the phase shift problem at intermediate nodes of stacked transistor configurations (STCs). Also, it reduces the effects of harmonic signals that in turns, enhances the overall power added efficiency (PAE) of the PA. The PA consists of two stages i.e. driver and main stages, designed using 2-STCs in 180-nm CMOS technology. The fabricated PA achieved a power gain of 12.8 dB at 23 GHz, a maximum PAE of 18.3%, an output power of 1 dB compression point \left(\mathrm{P}{1 \mathrm{~dB}}\right) of 14.1 1 dBm, and saturated output power \left(\mathrm{P}{\text {sat }}\right) of 16.0 dBm while it consumes chip area of 0.604 mm2 including pads.
AB - A three-Tunable low-pass π-phase compensator technique is proposed and employed in a K-band CMOS power amplifier (PA) to solve the phase shift problem at intermediate nodes of stacked transistor configurations (STCs). Also, it reduces the effects of harmonic signals that in turns, enhances the overall power added efficiency (PAE) of the PA. The PA consists of two stages i.e. driver and main stages, designed using 2-STCs in 180-nm CMOS technology. The fabricated PA achieved a power gain of 12.8 dB at 23 GHz, a maximum PAE of 18.3%, an output power of 1 dB compression point \left(\mathrm{P}{1 \mathrm{~dB}}\right) of 14.1 1 dBm, and saturated output power \left(\mathrm{P}{\text {sat }}\right) of 16.0 dBm while it consumes chip area of 0.604 mm2 including pads.
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U2 - 10.1109/RFIT54256.2022.9882403
DO - 10.1109/RFIT54256.2022.9882403
M3 - Conference contribution
AN - SCOPUS:85139098259
T3 - RFIT 2022 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology
SP - 42
EP - 44
BT - RFIT 2022 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2022
Y2 - 29 August 2022 through 31 August 2022
ER -