Abstract
This paper proposes an on-chip memory-path architecture employing the dynamically variable line-size (D-VLS) cache for high performance and low energy consumption. The D-VLS cache exploits the high on-chip memory bandwidth attainable on merged DRAM/logic LSIs by replacing a whole large cache line in one cycle. At the same time, it attempts to avoid frequent evictions by decreasing the cache-line size when programs have poor spatial locality. Activating only on-chip DRAM subarrays corresponding to a replaced cache-line size produces a significant energy reduction. In our simulation, it is observed that our proposed on-chip memory-path architecture, which employs a direct-mapped D-VLS cache, improves the ED (Energy Delay) product by more than 75% over a conventional memory-path model.
Original language | English |
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Pages (from-to) | 1716-1722 |
Number of pages | 7 |
Journal | IEICE Transactions on Electronics |
Volume | E83-C |
Issue number | 11 |
Publication status | Published - 2000 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering