A K-Band VCO Employing High Active Q-factor Defected Ground Structure Resonator in 0.18pm CMOS Technology

Nusrat Jahan, Chen Baichuan, Ramesh K. Pokharel, Adel Barakat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

In this paper, a new theory to improve the phase noise of a Voltage-Controlled Oscillator (VCO) utilizing dual series and parallel resonance to improve the susceptance slope parameter of the resonator circuit is proposed, and its effectiveness is demonstrated to design a low phase noise K-band VCO. The proposed dual resonance is realized using a compact defected ground structure (DGS) resonator, which achieve the additional series resonance by loading its transmission line by a series capacitor. The resulting susceptance slope, and active quality (Qk-) factor of the resonator circuit enhance that, in returns, improves the phase noise by 3.2dB of the same circuit without the series resonance. The design is implemented in 0.18 μm CMOS technology, and the post-layout simulation results show that VCO has a tuning range of 3.4%, and low phase noise with - 111.9 dBc/Hz @1 MHz offset at 21.04 GHz oscillation. The VCO consumes 7.5 mW power resulting in a FoM of -188.7 dB.

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538648810
DOIs
Publication statusPublished - Apr 26 2018
Event2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, Italy
Duration: May 27 2018May 30 2018

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2018-May
ISSN (Print)0271-4310

Other

Other2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
Country/TerritoryItaly
CityFlorence
Period5/27/185/30/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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