A low power UWB low noise amplifier using current reused and feedback techniques

A. I.A. Galal, Ramesh Pokharel, Haruichi Kanaya, K. Yoshida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This letter presents a full band low power low noise amplifier design in 0.18-μm complementary metal-oxide-semiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wide-band operation. An excellent wide and flat gain, low noise figure, are achieved by composes of these techniques. The implemented ultra-wideband (UWB) low noise amplifier (LNA) exhibits a flat gain of 18 dB with total power consumption of 5.2 mA from 1.8 V power supply. The noise figure is 3.1 dB within the entire bandwidth. The input and output return loss is less than -10 dB in the specified bandwidth. The proposed technique exhibits 0.8 dBm of IIP3. The active die area of UWB LNA occupies 0.72 mm 2.

Original languageEnglish
Pages (from-to)471-474
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume54
Issue number2
DOIs
Publication statusPublished - Feb 1 2012

Fingerprint

current amplifiers
Broadband amplifiers
Low noise amplifiers
Ultra-wideband (UWB)
low noise
Noise figure
broadband
Feedback
Electric power utilization
Bandwidth
amplifiers
Field effect transistors
bandwidth
Power amplifiers
amplifier design
shunts
Metals
power supplies
CMOS
field effect transistors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A low power UWB low noise amplifier using current reused and feedback techniques. / Galal, A. I.A.; Pokharel, Ramesh; Kanaya, Haruichi; Yoshida, K.

In: Microwave and Optical Technology Letters, Vol. 54, No. 2, 01.02.2012, p. 471-474.

Research output: Contribution to journalArticle

@article{be06b25577394c5ab9fd35798422a107,
title = "A low power UWB low noise amplifier using current reused and feedback techniques",
abstract = "This letter presents a full band low power low noise amplifier design in 0.18-μm complementary metal-oxide-semiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wide-band operation. An excellent wide and flat gain, low noise figure, are achieved by composes of these techniques. The implemented ultra-wideband (UWB) low noise amplifier (LNA) exhibits a flat gain of 18 dB with total power consumption of 5.2 mA from 1.8 V power supply. The noise figure is 3.1 dB within the entire bandwidth. The input and output return loss is less than -10 dB in the specified bandwidth. The proposed technique exhibits 0.8 dBm of IIP3. The active die area of UWB LNA occupies 0.72 mm 2.",
author = "Galal, {A. I.A.} and Ramesh Pokharel and Haruichi Kanaya and K. Yoshida",
year = "2012",
month = "2",
day = "1",
doi = "10.1002/mop.26550",
language = "English",
volume = "54",
pages = "471--474",
journal = "Microwave and Optical Technology Letters",
issn = "0895-2477",
publisher = "John Wiley and Sons Inc.",
number = "2",

}

TY - JOUR

T1 - A low power UWB low noise amplifier using current reused and feedback techniques

AU - Galal, A. I.A.

AU - Pokharel, Ramesh

AU - Kanaya, Haruichi

AU - Yoshida, K.

PY - 2012/2/1

Y1 - 2012/2/1

N2 - This letter presents a full band low power low noise amplifier design in 0.18-μm complementary metal-oxide-semiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wide-band operation. An excellent wide and flat gain, low noise figure, are achieved by composes of these techniques. The implemented ultra-wideband (UWB) low noise amplifier (LNA) exhibits a flat gain of 18 dB with total power consumption of 5.2 mA from 1.8 V power supply. The noise figure is 3.1 dB within the entire bandwidth. The input and output return loss is less than -10 dB in the specified bandwidth. The proposed technique exhibits 0.8 dBm of IIP3. The active die area of UWB LNA occupies 0.72 mm 2.

AB - This letter presents a full band low power low noise amplifier design in 0.18-μm complementary metal-oxide-semiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wide-band operation. An excellent wide and flat gain, low noise figure, are achieved by composes of these techniques. The implemented ultra-wideband (UWB) low noise amplifier (LNA) exhibits a flat gain of 18 dB with total power consumption of 5.2 mA from 1.8 V power supply. The noise figure is 3.1 dB within the entire bandwidth. The input and output return loss is less than -10 dB in the specified bandwidth. The proposed technique exhibits 0.8 dBm of IIP3. The active die area of UWB LNA occupies 0.72 mm 2.

UR - http://www.scopus.com/inward/record.url?scp=84055183809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84055183809&partnerID=8YFLogxK

U2 - 10.1002/mop.26550

DO - 10.1002/mop.26550

M3 - Article

AN - SCOPUS:84055183809

VL - 54

SP - 471

EP - 474

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 2

ER -