This letter presents a full band low power low noise amplifier design in 0.18-μm complementary metal-oxide-semiconductor FET (CMOS) technology.The proposed circuit adopts current reused technique to achieve low power consumption, and shunt resistive feedback for wide-band operation. An excellent wide and flat gain, low noise figure, are achieved by composes of these techniques. The implemented ultra-wideband (UWB) low noise amplifier (LNA) exhibits a flat gain of 18 dB with total power consumption of 5.2 mA from 1.8 V power supply. The noise figure is 3.1 dB within the entire bandwidth. The input and output return loss is less than -10 dB in the specified bandwidth. The proposed technique exhibits 0.8 dBm of IIP3. The active die area of UWB LNA occupies 0.72 mm 2.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering