A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes

Yuichi Fujita, Michihiro Yamada, Yuta Nagatomi, Keisuke Yamamoto, Shinya Yamada, Kentarou Sawano, Takeshi Kanashima, Hiroshi Nakashima, Kohei Hamaya

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