A MEMS digital mirror array integrated with high-voltage level-shifter

S. Maruyama, K. Takahashi, H. Fujita, H. Toshiyoshi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper reports the design, fabrication and demonstration of MEMS electrostatic digital mirror array (8 channels) integrated with 40V level-shifter drivers by the CMOS-first MEMS-last processing technique. A CMOS chip of high voltage level-shifter array (2.9 mm x 2.9 mm) was pre-fabricated on an 8-μm-thick SOI wafer, and micromechianical structures were post-processed by deep reactive ion etching (DRIE) in the nearby reticle area for monolithic integration. The mirror array has been developed for a fiber-optic wavelength selective switch (WSS) application.

Original languageEnglish
Title of host publicationTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages2314-2317
Number of pages4
DOIs
Publication statusPublished - 2009
EventTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States
Duration: Jun 21 2009Jun 25 2009

Publication series

NameTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

OtherTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
CountryUnited States
CityDenver, CO
Period6/21/096/25/09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Maruyama, S., Takahashi, K., Fujita, H., & Toshiyoshi, H. (2009). A MEMS digital mirror array integrated with high-voltage level-shifter. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 2314-2317). [5285899] (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2009.5285899