TY - JOUR
T1 - A Multiband VCO Using a Switched Series Resonance for Fine Frequency Tuning Sensitivity and Phase Noise Improvement
AU - Mansour, Islam
AU - Mansour, Marwa
AU - Aboualalaa, Mohamed
AU - Allam, Ahmed
AU - Abdel-Rahman, Adel B.
AU - Pokharel, Ramesh K.
AU - Abo-Zahhad, Mohammed
N1 - Publisher Copyright:
© 1993-2012 IEEE.
PY - 2021/12/1
Y1 - 2021/12/1
N2 - This work proposes a new technique to reduce the phase noise (PN) and improve the tuning sensitivity of $K$ -band voltage-controlled oscillators (VCOs) by increasing the quality ( $Q$ -) factor of the switched resonator. The proposed switched resonator consists of a high $Q$ -factor half-circle inductor in parallel with an improved switched varactor and operates in four different frequency bands using a single switching voltage pin. The proposed switched resonator introduces one pole before the parallel resonance frequency, which sharpens the skirt characteristics of the scattering parameters of the resonator. The chip is implemented in the 0.18- $\mu \text{m}$ CMOS technology, and the proposed VCO operates in four different frequency bands, with a total frequency tuning range (FTR) of 10.7%. The first band ranges from 19.4 to 19.84 GHz, the second band ranges from 19.8 to 20.3 GHz, the third band ranges from 20.25 to 20.73 GHz, and the fourth band ranges from 20.7 to 21.3 GHz. The VCO core circuit draws a dc current of 5 mA from a 1.8-V supply and achieves a PN of -110.7 at 1-MHz offset from a 20.25-GHz carrier. This proposed oscillator achieved a figure of merit (FoM) of -186.8 dBc/Hz, while the FoM taking account of the tuning voltage (FoM T/V) is -181.4 dBc/Hz.
AB - This work proposes a new technique to reduce the phase noise (PN) and improve the tuning sensitivity of $K$ -band voltage-controlled oscillators (VCOs) by increasing the quality ( $Q$ -) factor of the switched resonator. The proposed switched resonator consists of a high $Q$ -factor half-circle inductor in parallel with an improved switched varactor and operates in four different frequency bands using a single switching voltage pin. The proposed switched resonator introduces one pole before the parallel resonance frequency, which sharpens the skirt characteristics of the scattering parameters of the resonator. The chip is implemented in the 0.18- $\mu \text{m}$ CMOS technology, and the proposed VCO operates in four different frequency bands, with a total frequency tuning range (FTR) of 10.7%. The first band ranges from 19.4 to 19.84 GHz, the second band ranges from 19.8 to 20.3 GHz, the third band ranges from 20.25 to 20.73 GHz, and the fourth band ranges from 20.7 to 21.3 GHz. The VCO core circuit draws a dc current of 5 mA from a 1.8-V supply and achieves a PN of -110.7 at 1-MHz offset from a 20.25-GHz carrier. This proposed oscillator achieved a figure of merit (FoM) of -186.8 dBc/Hz, while the FoM taking account of the tuning voltage (FoM T/V) is -181.4 dBc/Hz.
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U2 - 10.1109/TVLSI.2021.3115050
DO - 10.1109/TVLSI.2021.3115050
M3 - Article
AN - SCOPUS:85119586780
SN - 1063-8210
VL - 29
SP - 2163
EP - 2171
JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IS - 12
ER -