A new approach of element sensitive ion beam etching based on mass dependence of sputtering for metal oxides

M. Tanamura, H. Kida, Yukio Watanabe, Naotake Toyama

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A new approach of the ion milling is proposed, utilizing the mass selectivity of the sputtering process. As model experiments, we performed etching of conducting perovskite oxide films that are often used as electrode of ferroelectric films and are known to be extremely structure-sensitive. By using He, N2, Ar and Kr as an etching gas, various etching characteristics are found to depend evidently on the molecular weight of the gas. Substantial improvements are demonstrated by using Kr that has the heaviest molecular weight. To explain the results, a semi-empirical extension of Sigmund theory is proposed. The present approach provides a new way to etch metal oxides including ferroelectrics by utilizing the atomic/molecular mass effect in the sputtering.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume42
Issue numberSUPPL.
Publication statusPublished - Apr 2003

Fingerprint

metal oxides
sputtering
ion beams
etching
molecular weight
gases
oxide films
selectivity
conduction
electrodes
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

A new approach of element sensitive ion beam etching based on mass dependence of sputtering for metal oxides. / Tanamura, M.; Kida, H.; Watanabe, Yukio; Toyama, Naotake.

In: Journal of the Korean Physical Society, Vol. 42, No. SUPPL., 04.2003.

Research output: Contribution to journalArticle

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