A new approach of the ion milling is proposed, utilizing the mass selectivity of the sputtering process. As model experiments, we performed etching of conducting perovskite oxide films that are often used as electrode of ferroelectric films and are known to be extremely structure-sensitive. By using He, N2, Ar and Kr as an etching gas, various etching characteristics are found to depend evidently on the molecular weight of the gas. Substantial improvements are demonstrated by using Kr that has the heaviest molecular weight. To explain the results, a semi-empirical extension of Sigmund theory is proposed. The present approach provides a new way to etch metal oxides including ferroelectrics by utilizing the atomic/molecular mass effect in the sputtering.
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - Apr 2003|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)