A new capacitive-type NO2 gas sensor combining an MIS with a solid electrolyte

Cyrus Zamani; Kengo Shimanoe; Noboru Yamazoe

doi:10.1016/j.snb.2004.12.049

A new capacitive-type NO₂ gas sensor combining an MIS with a solid electrolyte

Cyrus Zamani, Kengo Shimanoe, Noboru Yamazoe

Functional Materials Science

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A new capacitive-type gas sensor for NO₂ detection was fabricated by depositing NaNO₂-based solid electrolyte layer together with an Au electrode over insulator-semiconductor structure. The resulting device exhibited expected metal-insulator-semiconductor (MIS) characteristics at 160 °C in air. In NO₂ containing air, the voltage at constant capacitance was found to shift in negative direction in a well-controlled manner as the NO₂ concentration increased. The voltage necessary to keep the capacitance was found to decrease linearly with an increase in the logarithm of NO₂ concentration. The sensing mechanism seems to involve one electron reduction of NO₂ at the Au electrode/NaNO₂ interface.

Original language	English
Pages (from-to)	216-220
Number of pages	5
Journal	Sensors and Actuators, B: Chemical
Volume	109
Issue number	2
DOIs	https://doi.org/10.1016/j.snb.2004.12.049
Publication status	Published - Sept 14 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2004.12.049

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abstract = "A new capacitive-type gas sensor for NO2 detection was fabricated by depositing NaNO2-based solid electrolyte layer together with an Au electrode over insulator-semiconductor structure. The resulting device exhibited expected metal-insulator-semiconductor (MIS) characteristics at 160 °C in air. In NO2 containing air, the voltage at constant capacitance was found to shift in negative direction in a well-controlled manner as the NO2 concentration increased. The voltage necessary to keep the capacitance was found to decrease linearly with an increase in the logarithm of NO2 concentration. The sensing mechanism seems to involve one electron reduction of NO2 at the Au electrode/NaNO2 interface.",

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AB - A new capacitive-type gas sensor for NO2 detection was fabricated by depositing NaNO2-based solid electrolyte layer together with an Au electrode over insulator-semiconductor structure. The resulting device exhibited expected metal-insulator-semiconductor (MIS) characteristics at 160 °C in air. In NO2 containing air, the voltage at constant capacitance was found to shift in negative direction in a well-controlled manner as the NO2 concentration increased. The voltage necessary to keep the capacitance was found to decrease linearly with an increase in the logarithm of NO2 concentration. The sensing mechanism seems to involve one electron reduction of NO2 at the Au electrode/NaNO2 interface.

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A new capacitive-type NO₂ gas sensor combining an MIS with a solid electrolyte

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