A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions

M. Hane, Y. Kawakami, H. Nakamura, T. Yamada, K. Kumagai, Y. Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for α-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-μm SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.

Original languageEnglish
Title of host publicationSISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages239-242
Number of pages4
ISBN (Electronic)0780378261
DOIs
Publication statusPublished - Jan 1 2003
Event2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States
Duration: Sep 3 2003Sep 5 2003

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2003-January

Other

Other2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
CountryUnited States
CityBoston
Period9/3/039/5/03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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    Hane, M., Kawakami, Y., Nakamura, H., Yamada, T., Kumagai, K., & Watanabe, Y. (2003). A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 239-242). [1233681] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233681