TY - GEN
T1 - A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions
AU - Hane, M.
AU - Kawakami, Y.
AU - Nakamura, H.
AU - Yamada, T.
AU - Kumagai, K.
AU - Watanabe, Y.
PY - 2003/1/1
Y1 - 2003/1/1
N2 - A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for α-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-μm SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.
AB - A new SRAM soft-error simulation tool has been developed and its accuracy was evaluated through both acceleration tests for α-particles and energetic neutron beam irradiations. This simulation was able to reproduce the measurement data for the soft-error rate of a 0.15-μm SRAM (test-chip) within a factor of two, including the power supply voltage dependency. The simulation system consists of several sub-parts, and features a new data-set for neutron/silicon-atom nuclear reactions and the use of a three-dimensional device simulator for calculating precise charge collection amounts. This accurate simulation can be used for quantitative evaluation of competing effects by means of reduced critical charges and cell-area reduction, and have applications in developing future SRAM technology.
UR - http://www.scopus.com/inward/record.url?scp=77957013742&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957013742&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2003.1233681
DO - 10.1109/SISPAD.2003.1233681
M3 - Conference contribution
AN - SCOPUS:77957013742
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 239
EP - 242
BT - SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
Y2 - 3 September 2003 through 5 September 2003
ER -