A new merged bipolar-MOS transistor in a silicon on insulator structure

Yue Sheng Zheng, Tanemasa Asano

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new metal-oxide-silicon (MOS)/bipolar merged transistor structure in a silicon on insulator (SOI), which has a MOS structure with a built-in bipolar mechanism, is proposed. The transistor has a frame of a metal-oxide-silicon field-effect-transistor (MOSFET) having the gate at the bottom. A vertical bipolar transistor is built in the drain region by introducing an opposite-type impurity through a polycrystalline silicon buffer layer. Implementation of the device in an SOI structure avoids parasitic effects such as the latch-up, which appears when a merged structure is used to construct a complementary circuit. A two-dimensional device simulation shows the current amplification property of the merged transistor, while also revealing the critical design parameter for successful operation. A test device is fabricated using a process which employs a wafer bonding and polish-back technique. The results prove the feasibility of the proposed device.

Original languageEnglish
Pages (from-to)2501-2505
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number4 B
Publication statusPublished - Dec 1 1999

Fingerprint

silicon transistors
Silicon oxides
metal oxides
Transistors
Bipolar transistors
insulators
Silicon
silicon
bipolar transistors
Metals
Gates (transistor)
Wafer bonding
transistors
latch-up
Buffer layers
Field effect transistors
Polysilicon
Amplification
Impurities
field effect transistors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

A new merged bipolar-MOS transistor in a silicon on insulator structure. / Zheng, Yue Sheng; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 4 B, 01.12.1999, p. 2501-2505.

Research output: Contribution to journalArticle

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