Abstract
Time-dependent density functional theory (TD-DFT) calculations using the B3LYP hybrid functional suggested that sulfonic acid esters are transparent at around 157 nm region. Based on these findings, poly(methyl vinyl sulfonate) [poly(VSO3Me)] was prepared and found to have an extremely low absorbance (Abs.) of 2.2 μm-1 at 157 nm. Various alkyl vinyl sulfonates (VSO3R)s were prepared from 2-chloroethanesulfonyl chloride and alcohol components in the presence of pyridine, and their radical polymerizations were conducted in bulk using 2,2′-azobis(isobutyronitrile) as an initiator. Polymerizations of primary and secondary VSO3Rs bearing small alkyl substituents gave homopolymers with high molecular weights. Among them, the Abs. of poly(2,2,2-trifluoroethyl vinyl sulfonate) reached to 1.3 μm-1. Various copolymers from alkyl vinyl sulfonates and 4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)styrene (HFISt) were also prepared and the Abs. of poly(1,1,1,3,3,3-hexafluoroisopropyl vinyl sulfonate40-co-HFISt60) [poly(VSO3iPr6F40-co-HFISt60)] was found to be 2.4 μm-1 at 157 nm. The photoresist consisting of partially t-BOC-protected poly(VSO3iPr6F40-co-HFISt28-co-t-BOCHFISt32) (Abs. 2.6) and an photoacid generator showed the contrast and sensitivity of 10.3 and 5.0 mJ cm-2, respectively.
Original language | English |
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Pages (from-to) | 643-654 |
Number of pages | 12 |
Journal | Journal of Photopolymer Science and Technology |
Volume | 15 |
Issue number | 4 |
DOIs | |
Publication status | Published - Jan 1 2002 |
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All Science Journal Classification (ASJC) codes
- Polymers and Plastics
- Organic Chemistry
- Materials Chemistry
Cite this
A new photoresist material for 157 nm lithography-2. / Fujigaya, T.; Ando, S.; Shibasaki, Y.; Kishimura, S.; Endo, M.; Sasago, M.; Ueda, M.
In: Journal of Photopolymer Science and Technology, Vol. 15, No. 4, 01.01.2002, p. 643-654.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A new photoresist material for 157 nm lithography-2
AU - Fujigaya, T.
AU - Ando, S.
AU - Shibasaki, Y.
AU - Kishimura, S.
AU - Endo, M.
AU - Sasago, M.
AU - Ueda, M.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - Time-dependent density functional theory (TD-DFT) calculations using the B3LYP hybrid functional suggested that sulfonic acid esters are transparent at around 157 nm region. Based on these findings, poly(methyl vinyl sulfonate) [poly(VSO3Me)] was prepared and found to have an extremely low absorbance (Abs.) of 2.2 μm-1 at 157 nm. Various alkyl vinyl sulfonates (VSO3R)s were prepared from 2-chloroethanesulfonyl chloride and alcohol components in the presence of pyridine, and their radical polymerizations were conducted in bulk using 2,2′-azobis(isobutyronitrile) as an initiator. Polymerizations of primary and secondary VSO3Rs bearing small alkyl substituents gave homopolymers with high molecular weights. Among them, the Abs. of poly(2,2,2-trifluoroethyl vinyl sulfonate) reached to 1.3 μm-1. Various copolymers from alkyl vinyl sulfonates and 4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)styrene (HFISt) were also prepared and the Abs. of poly(1,1,1,3,3,3-hexafluoroisopropyl vinyl sulfonate40-co-HFISt60) [poly(VSO3iPr6F40-co-HFISt60)] was found to be 2.4 μm-1 at 157 nm. The photoresist consisting of partially t-BOC-protected poly(VSO3iPr6F40-co-HFISt28-co-t-BOCHFISt32) (Abs. 2.6) and an photoacid generator showed the contrast and sensitivity of 10.3 and 5.0 mJ cm-2, respectively.
AB - Time-dependent density functional theory (TD-DFT) calculations using the B3LYP hybrid functional suggested that sulfonic acid esters are transparent at around 157 nm region. Based on these findings, poly(methyl vinyl sulfonate) [poly(VSO3Me)] was prepared and found to have an extremely low absorbance (Abs.) of 2.2 μm-1 at 157 nm. Various alkyl vinyl sulfonates (VSO3R)s were prepared from 2-chloroethanesulfonyl chloride and alcohol components in the presence of pyridine, and their radical polymerizations were conducted in bulk using 2,2′-azobis(isobutyronitrile) as an initiator. Polymerizations of primary and secondary VSO3Rs bearing small alkyl substituents gave homopolymers with high molecular weights. Among them, the Abs. of poly(2,2,2-trifluoroethyl vinyl sulfonate) reached to 1.3 μm-1. Various copolymers from alkyl vinyl sulfonates and 4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)styrene (HFISt) were also prepared and the Abs. of poly(1,1,1,3,3,3-hexafluoroisopropyl vinyl sulfonate40-co-HFISt60) [poly(VSO3iPr6F40-co-HFISt60)] was found to be 2.4 μm-1 at 157 nm. The photoresist consisting of partially t-BOC-protected poly(VSO3iPr6F40-co-HFISt28-co-t-BOCHFISt32) (Abs. 2.6) and an photoacid generator showed the contrast and sensitivity of 10.3 and 5.0 mJ cm-2, respectively.
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U2 - 10.2494/photopolymer.15.643
DO - 10.2494/photopolymer.15.643
M3 - Article
AN - SCOPUS:0036361950
VL - 15
SP - 643
EP - 654
JO - Journal of Photopolymer Science and Technology
JF - Journal of Photopolymer Science and Technology
SN - 0914-9244
IS - 4
ER -