Abstract
Field electron emitter arrays (FEAs) have been fabricated by a novel self-aligned process. In this process the crystal-orientation dependent (anisotropic) and doping density dependent etching characteristics of single crystal Si are fully utilized. The emitter is formed by depositing a material in a mold prepared by anisotropic etching and thermal oxidation of Si. The gate is made of highly boron doped single-crystal Si, which acts as the etching mask for the mold formation. Gate/emitter spacing is determined by well-controlled ion implantation and thermal diffusion processes. FEAs with WSi2 emitters have been fabricated. The results demonstrate a small dispersion in gate/emitter spacing 3σ = 0.19 μm where σ is the standard deviation. FEA operation at about 10V is demonstrated.
Original language | English |
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Pages (from-to) | 6632-6636 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 35 |
Issue number | 12 SUPPL. B |
DOIs | |
Publication status | Published - Dec 1996 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)