A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces

Yoshihiro Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi

Research output: Contribution to journalArticle

101 Citations (Scopus)

Abstract

We propose a new theoretical approach for studying adsorption-desorption behavior of atoms on semiconductor surfaces. The new theoretical approach based on the ab initio calculations incorporates the free energy of gas phase; therefore we can calculate how adsorption and desorption depends on growth temperature and beam equivalent pressure (BEP). The versatility of the new theoretical approach was confirmed by the calculation of Ga adsorption-desorption transition temperatures and transition BEPs on the GaAs(0 0 1)-(4 × 2)β2 Ga-rich surface. This new approach is feasible to predict how adsorption and desorption depend on the growth conditions.

Original languageEnglish
Pages (from-to)178-181
Number of pages4
JournalSurface Science
Volume493
Issue number1-3
DOIs
Publication statusPublished - Nov 1 2001
Externally publishedYes

Fingerprint

Desorption
desorption
Adsorption
adsorption
Growth temperature
versatility
Free energy
Superconducting transition temperature
Gases
transition temperature
free energy
Semiconductor materials
vapor phases
Atoms
gallium arsenide
atoms
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces. / Kangawa, Yoshihiro; Ito, T.; Taguchi, A.; Shiraishi, K.; Ohachi, T.

In: Surface Science, Vol. 493, No. 1-3, 01.11.2001, p. 178-181.

Research output: Contribution to journalArticle

Kangawa, Yoshihiro ; Ito, T. ; Taguchi, A. ; Shiraishi, K. ; Ohachi, T. / A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces. In: Surface Science. 2001 ; Vol. 493, No. 1-3. pp. 178-181.
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