A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces

Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi

Research output: Contribution to journalArticle

108 Citations (Scopus)

Abstract

We propose a new theoretical approach for studying adsorption-desorption behavior of atoms on semiconductor surfaces. The new theoretical approach based on the ab initio calculations incorporates the free energy of gas phase; therefore we can calculate how adsorption and desorption depends on growth temperature and beam equivalent pressure (BEP). The versatility of the new theoretical approach was confirmed by the calculation of Ga adsorption-desorption transition temperatures and transition BEPs on the GaAs(0 0 1)-(4 × 2)β2 Ga-rich surface. This new approach is feasible to predict how adsorption and desorption depend on the growth conditions.

Original languageEnglish
Pages (from-to)178-181
Number of pages4
JournalSurface Science
Volume493
Issue number1-3
DOIs
Publication statusPublished - Nov 1 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'A new theoretical approach to adsorption-desorption behavior of Ga on GaAs surfaces'. Together they form a unique fingerprint.

  • Cite this