A new type of tunnel-effect transistor employing internal field emission of schottky barrier junction

Reiji Hattori, Akihiro Nakae, Junji Shirafuji

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Abstract

A new type of tunnel-effect transistor, which has nearly the same structure as conventional metal-oxide-silicon field- effect transistors (MOSFET’s) except for a Schottky barrier source contact and a low resistivity channel layer, has been proposed. The structure has the advantage of an easy fabrication process and is capable of submicron channel length without the short channel effect. In the proposed device the drain current is controlled by the gate bias through the tunnel injection of electrons at the Schottky barrier source contact. A 2-D device simulation has shown that this device can have a high transconductance of 138 mS/mm at a drain voltage of 2 V.

Original languageEnglish
Pages (from-to)L1467-L1469
JournalJapanese Journal of Applied Physics
Volume31
Issue number10
DOIs
Publication statusPublished - Oct 1992
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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