A new type of tunnel-effect transistor employing internal field emission of schottky barrier junction

Engineering

• Channel Layer 16%
• Channel Length 16%
• Current Drain 16%
• Drain Voltage 16%
• Effect Transistor 33%
• Fabrication 16%
• Field Emission 16%
• Field-Effect Transistor 16%
• Gate Bias 16%
• Internal Field 16%
• Metal Oxide 33%
• Schottky Barrier 100%
• Simulation 16%
• Tunnels 50%

Physics

• Electrical Resistivity 16%
• Fabrication 16%
• Field Effect Transistor 16%
• Field Emission 16%
• Injection 16%
• Silicon 16%
• Simulation 16%
• Tunnel 50%

Material Science

• Devices 50%