A oxide nanowire for probing nanoscale memristive switching

Kazuki Nagashima, Takeshi Yanagida, Masaki Kanai, Tomoji Kawai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Memristive switching, which is nonvolatile resistive switching in metal/oxide/metal sandwich structures, have attracted considerable attention not only for the next-generation nonvolatile memory but also for the artificial neural network computing. Despite the excellent memory performance, the physical origin of memristive switching occurring in the simple two terminal device structure had been missing, which was a central issue of this research field. It was widely accepted that the memristive switching is governed by formation and rupture of nanoscale conducting path in insulative matrix, however, extracting and evaluating such nanoscale conduction paths was difficult due to the lack of evaluation method. In this study, we demonstrate a unique approach to reveal the nature of memristive switching by using an oxide nanowire. The oxide nanowire successfully extracted the nanoscale conduction path and revealed the redox based conduction mechanism with the direct experimental evidence, which had been unfeasible in conventional thin film device form. The obtained results captured the many intrinsic features of memristive switching.

Original languageEnglish
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages120-123
Number of pages4
ISBN (Electronic)9781467381550
DOIs
Publication statusPublished - Jan 1 2015
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: Jul 27 2015Jul 30 2015

Publication series

NameIEEE-NANO 2015 - 15th International Conference on Nanotechnology

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period7/27/157/30/15

Fingerprint

Oxides
Nanowires
Metals
Thin film devices
Data storage equipment
Sandwich structures
Neural networks

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Nagashima, K., Yanagida, T., Kanai, M., & Kawai, T. (2015). A oxide nanowire for probing nanoscale memristive switching. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology (pp. 120-123). [7388853] (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2015.7388853

A oxide nanowire for probing nanoscale memristive switching. / Nagashima, Kazuki; Yanagida, Takeshi; Kanai, Masaki; Kawai, Tomoji.

IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. p. 120-123 7388853 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nagashima, K, Yanagida, T, Kanai, M & Kawai, T 2015, A oxide nanowire for probing nanoscale memristive switching. in IEEE-NANO 2015 - 15th International Conference on Nanotechnology., 7388853, IEEE-NANO 2015 - 15th International Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 120-123, 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015, Rome, Italy, 7/27/15. https://doi.org/10.1109/NANO.2015.7388853
Nagashima K, Yanagida T, Kanai M, Kawai T. A oxide nanowire for probing nanoscale memristive switching. In IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc. 2015. p. 120-123. 7388853. (IEEE-NANO 2015 - 15th International Conference on Nanotechnology). https://doi.org/10.1109/NANO.2015.7388853
Nagashima, Kazuki ; Yanagida, Takeshi ; Kanai, Masaki ; Kawai, Tomoji. / A oxide nanowire for probing nanoscale memristive switching. IEEE-NANO 2015 - 15th International Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 120-123 (IEEE-NANO 2015 - 15th International Conference on Nanotechnology).
@inproceedings{32f85b3cfc0943e4bfcf541580067663,
title = "A oxide nanowire for probing nanoscale memristive switching",
abstract = "Memristive switching, which is nonvolatile resistive switching in metal/oxide/metal sandwich structures, have attracted considerable attention not only for the next-generation nonvolatile memory but also for the artificial neural network computing. Despite the excellent memory performance, the physical origin of memristive switching occurring in the simple two terminal device structure had been missing, which was a central issue of this research field. It was widely accepted that the memristive switching is governed by formation and rupture of nanoscale conducting path in insulative matrix, however, extracting and evaluating such nanoscale conduction paths was difficult due to the lack of evaluation method. In this study, we demonstrate a unique approach to reveal the nature of memristive switching by using an oxide nanowire. The oxide nanowire successfully extracted the nanoscale conduction path and revealed the redox based conduction mechanism with the direct experimental evidence, which had been unfeasible in conventional thin film device form. The obtained results captured the many intrinsic features of memristive switching.",
author = "Kazuki Nagashima and Takeshi Yanagida and Masaki Kanai and Tomoji Kawai",
year = "2015",
month = "1",
day = "1",
doi = "10.1109/NANO.2015.7388853",
language = "English",
series = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "120--123",
booktitle = "IEEE-NANO 2015 - 15th International Conference on Nanotechnology",
address = "United States",

}

TY - GEN

T1 - A oxide nanowire for probing nanoscale memristive switching

AU - Nagashima, Kazuki

AU - Yanagida, Takeshi

AU - Kanai, Masaki

AU - Kawai, Tomoji

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Memristive switching, which is nonvolatile resistive switching in metal/oxide/metal sandwich structures, have attracted considerable attention not only for the next-generation nonvolatile memory but also for the artificial neural network computing. Despite the excellent memory performance, the physical origin of memristive switching occurring in the simple two terminal device structure had been missing, which was a central issue of this research field. It was widely accepted that the memristive switching is governed by formation and rupture of nanoscale conducting path in insulative matrix, however, extracting and evaluating such nanoscale conduction paths was difficult due to the lack of evaluation method. In this study, we demonstrate a unique approach to reveal the nature of memristive switching by using an oxide nanowire. The oxide nanowire successfully extracted the nanoscale conduction path and revealed the redox based conduction mechanism with the direct experimental evidence, which had been unfeasible in conventional thin film device form. The obtained results captured the many intrinsic features of memristive switching.

AB - Memristive switching, which is nonvolatile resistive switching in metal/oxide/metal sandwich structures, have attracted considerable attention not only for the next-generation nonvolatile memory but also for the artificial neural network computing. Despite the excellent memory performance, the physical origin of memristive switching occurring in the simple two terminal device structure had been missing, which was a central issue of this research field. It was widely accepted that the memristive switching is governed by formation and rupture of nanoscale conducting path in insulative matrix, however, extracting and evaluating such nanoscale conduction paths was difficult due to the lack of evaluation method. In this study, we demonstrate a unique approach to reveal the nature of memristive switching by using an oxide nanowire. The oxide nanowire successfully extracted the nanoscale conduction path and revealed the redox based conduction mechanism with the direct experimental evidence, which had been unfeasible in conventional thin film device form. The obtained results captured the many intrinsic features of memristive switching.

UR - http://www.scopus.com/inward/record.url?scp=84964341353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964341353&partnerID=8YFLogxK

U2 - 10.1109/NANO.2015.7388853

DO - 10.1109/NANO.2015.7388853

M3 - Conference contribution

AN - SCOPUS:84964341353

T3 - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

SP - 120

EP - 123

BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

ER -