A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC

Susumu Kamoi, Kenji Kisoda, Noriyuki Hasuike, Hiroshi Harima, Kouhei Morita, Tanaka Satoru, Akihiro Hashimoto, Hiroki Hibino

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times.

Original languageEnglish
Pages (from-to)80-83
Number of pages4
JournalDiamond and Related Materials
Volume25
DOIs
Publication statusPublished - May 1 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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