A recessed channel MOSFET with plasma-grown silicon oxynitride gate dielectric

Physics

• Silicon 100%
• Oxynitrides 100%
• Field Effect Transistor 66%
• Oxide 16%
• Diffusivity 16%
• Fabrication 16%
• Oxidation 16%
• Nitrogen Plasma 16%
• Oxygen Plasma 16%
• Solid Phase 16%
• Carrier Mobility 16%

Material Science

• Devices 33%
• Nitriding 33%
• Interface Property 33%
• Mechanical Strength 16%
• Characterization 16%
• Wet Etching 16%
• Carrier Mobility 16%

Engineering

• Gate Dielectric 33%
• Diffusion 16%
• Characteristics 16%
• Fabrication 16%
• Anisotropic 16%
• Layer Thickness 16%
• Carrier Mobility 16%