A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

Yuki Yamashita; Daisuke Kanemoto; Haruichi Kanaya; Ramesh K. Pokharel; Keiji Yoshida

doi:10.1587/elex.10.20130174

A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

Yuki Yamashita, Daisuke Kanemoto, Haruichi Kanaya, Ramesh K. Pokharel, Keiji Yoshida

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-μm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm². The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4% power-added efficiency with 2.3V power supply voltage into a 50 Ω load.

Original language	English
Article number	20130174
Journal	IEICE Electronics Express
Volume	10
Issue number	8
DOIs	https://doi.org/10.1587/elex.10.20130174
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1587/elex.10.20130174

Cite this

@article{1bf277b506b44d98adee83579acab983,

title = "A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system",

abstract = "This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-μm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm2. The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4% power-added efficiency with 2.3V power supply voltage into a 50 Ω load.",

author = "Yuki Yamashita and Daisuke Kanemoto and Haruichi Kanaya and Pokharel, {Ramesh K.} and Keiji Yoshida",

year = "2013",

doi = "10.1587/elex.10.20130174",

language = "English",

volume = "10",

journal = "IEICE Electronics Express",

issn = "1349-2543",

publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",

number = "8",

}

TY - JOUR

T1 - A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

AU - Yamashita, Yuki

AU - Kanemoto, Daisuke

AU - Kanaya, Haruichi

AU - Pokharel, Ramesh K.

AU - Yoshida, Keiji

PY - 2013

Y1 - 2013

N2 - This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-μm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm2. The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4% power-added efficiency with 2.3V power supply voltage into a 50 Ω load.

AB - This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-μm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3 mm2. The measurement results indicate that the PA delivers 16.4 dBm output power and 35.4% power-added efficiency with 2.3V power supply voltage into a 50 Ω load.

UR - http://www.scopus.com/inward/record.url?scp=84877637672&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877637672&partnerID=8YFLogxK

U2 - 10.1587/elex.10.20130174

DO - 10.1587/elex.10.20130174

M3 - Article

AN - SCOPUS:84877637672

SN - 1349-2543

VL - 10

JO - IEICE Electronics Express

JF - IEICE Electronics Express

IS - 8

M1 - 20130174

ER -

A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this