A self-biasing class-E power amplifier for 5-GHz constant envelope modulation system

Yuki Yamashita, Daisuke Kanemoto, Haruichi Kanaya, Ramesh K. Pokharel, Keiji Yoshida

Research output: Contribution to journalArticlepeer-review

Abstract

This paper describes the design of 5-GHz fully integrated self-biasing power amplifier (PA) for wireless transmitter applications in a 0.18-µm CMOS technology. The proposed class-E PA employs the cascode topology with a self-biasing technique to reduce device stress. Three cascaded class-D driver amplifiers are used to actualize the sharp switching at the class-E power stage. All device components are integrated on chip and the chip area is 1.0×1.3mm<sup>2</sup>. The measurement results indicate that the PA delivers 16.4dBm output power and 35.4% power-added efficiency with 2.3V power supply voltage into a 50Ω load.
Original languageEnglish
Pages (from-to)20130174-20130174
Number of pages1
JournalIEICE Electronics Express
Volume10
Issue number8
DOIs
Publication statusPublished - 2013

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