A Si1-xGex/Si single quantum well p-i-n structure grown by solid-source and gas source "hybrid" Si molecular beam epitaxy

Y. Kato, S. Fukatsu, N. Usami, Y. Shiraki

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2 Citations (Scopus)

Abstract

By means of "hybrid" Si molecular beam epitaxy (MBE), an n-type Si contact layer for an electroluminescent (EL) p-i-n diode was successfully regrown on a Si1-xGex/Si single quantum well (SQW) layer. The starting undoped SQW layer was grown by gas-source MBE (GSMBE) using disilane (Si2H6) and germane (GeH4), and the n-Si contact layer was regrown by using solid-source MBE after transferring the sample through the air. A (2×1) reconstruction was observed on a GSMBE-prepared Si surface even after the sample was exposed to air for 15 h. Evidence of the excellent quality of the EL p-i-n device was provided by the sharpest emission lines, ≈ 5.5 meV, ever reported in the EL spectra of an SiGe system.

Original languageEnglish
Pages (from-to)355-360
Number of pages6
JournalJournal of Crystal Growth
Volume136
Issue number1-4
DOIs
Publication statusPublished - Mar 1 1994

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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