TY - JOUR
T1 - A solvent-free and vacuum-free melt-processing method to fabricate organic semiconducting layers with large crystal size for organic electronic applications
AU - Ribierre, Jean Charles Maurice
AU - Li, Zhao
AU - Liu, Xiao
AU - Lacaze, Emmanuelle
AU - Heinrich, Benoît
AU - Méry, Stephane
AU - Sleczkowski, Piotr
AU - Xiao, Yiming
AU - Lafolet, Frédéric
AU - Hashizume, Daisuke
AU - Aoyama, Tetsuya
AU - Uchiyama, Masanobu
AU - Wu, Jeong Weon
AU - Zaborova, Elena
AU - Fages, Frédéric
AU - D'Aléo, Anthony
AU - Mathevet, Fabrice Dominique
AU - Adachi, Chihaya
N1 - Funding Information:
This work was supported in part by the JST ERATO Grant JPMJER1305, Japan, and by funding of the Ministry of Science, ICT & Future Planning, Korea (2014M3A6B3063706, 2017 R1E1A1A01075394). FM acknowledges Kyushu University and the OPERA laboratory for the visiting professor position during this work.
Funding Information:
This work was supported in part by the JST ERATO Grant JPMJER1305, Japan, and by funding of the Ministry of Science, ICT & Future Planning, Korea (2014M3A6B3063706, 2017R1E1A1A01075394). FM acknowledges Kyushu University and the OPERA laboratory for the visiting professor position during this work.
Publisher Copyright:
This journal is © The Royal Society of Chemistry.
PY - 2019
Y1 - 2019
N2 - We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size and enhanced charge carrier mobilities. The organic compound used in this work is a solution-processable oligo(p-phenylene vinylene) derivative substituted at both ends with pyrene moieties. Accurate control of the temperature during the recrystallization of this compound from the melt enables the formation of large single crystal monodomains in thin films. The melt-processed organic layer shows higher mobilities in transistor configuration than in spin-coated films, which can be attributed to the presence of large-size crystalline monodomains as evidenced by X-ray diffraction measurements. We also investigated the photophysical properties of this material in spin-coated and melted films and found an increase of the photoluminescence quantum yield with the size of the crystals in the organic layer. The advantage of this method over the spin coating also allowed observation of amplified spontaneous emission that was only achieved in the melted film due to its improved luminescence efficiency. Overall, this study demonstrates a simple and versatile method, which does not require the use of any solvent and vacuum, to fabricate organic layers with large crystal size, suitable for the realization of organic electronic and light-emitting devices.
AB - We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size and enhanced charge carrier mobilities. The organic compound used in this work is a solution-processable oligo(p-phenylene vinylene) derivative substituted at both ends with pyrene moieties. Accurate control of the temperature during the recrystallization of this compound from the melt enables the formation of large single crystal monodomains in thin films. The melt-processed organic layer shows higher mobilities in transistor configuration than in spin-coated films, which can be attributed to the presence of large-size crystalline monodomains as evidenced by X-ray diffraction measurements. We also investigated the photophysical properties of this material in spin-coated and melted films and found an increase of the photoluminescence quantum yield with the size of the crystals in the organic layer. The advantage of this method over the spin coating also allowed observation of amplified spontaneous emission that was only achieved in the melted film due to its improved luminescence efficiency. Overall, this study demonstrates a simple and versatile method, which does not require the use of any solvent and vacuum, to fabricate organic layers with large crystal size, suitable for the realization of organic electronic and light-emitting devices.
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U2 - 10.1039/c8tc04834g
DO - 10.1039/c8tc04834g
M3 - Article
AN - SCOPUS:85062887670
VL - 7
SP - 3190
EP - 3198
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 11
ER -