A Standard Sample Preparation Method for the Determination of Metal Impurities on a Silicon Wafer by Total Reflection X-Ray Fluorescence Spectrometry†

Yoshihiro Mori, Kengo Shimanoe, Tadashi Sakon

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Total reflection X-ray fluorescence spectrometry (TXRF) is widely used for the determination of surface metal contamination on a silicon wafer. In TXRF measurements, calibration standard samples are needed to quantify the metal concentration. We propose a new method for the preparation of calibration standard samples for TXRF. The method is called “Immersion in Alkaline Hydrogen Peroxide Solution (IAP)”, in which the silicon wafers are immersed in an intentionally contaminated alkaline hydrogen peroxide solution. Samples made by the IAP method are suitable calibration standard samples for TXRF because of their good depth profile reproducibility and good uniformity on the surface as well as homogeneity in a given batch. They can also be applied for making a cross-check among plural TXRF instruments as well as among different analytical methods.

Original languageEnglish
Pages (from-to)499-504
Number of pages6
Journalanalytical sciences
Volume11
Issue number3
DOIs
Publication statusPublished - Jan 1 1995

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Silicon wafers
Metals
Impurities
Calibration
Hydrogen Peroxide
Contamination
X-Ray Emission Spectrometry

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry

Cite this

A Standard Sample Preparation Method for the Determination of Metal Impurities on a Silicon Wafer by Total Reflection X-Ray Fluorescence Spectrometry†. / Mori, Yoshihiro; Shimanoe, Kengo; Sakon, Tadashi.

In: analytical sciences, Vol. 11, No. 3, 01.01.1995, p. 499-504.

Research output: Contribution to journalArticle

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