A study of the conformal coating technique on the 3D stack semiconductors devices 1st report, invention of the through-Silicon Via (TSV) coating method with the rotary atomizer aerosol spray and trail manufacture of a coating system

Yoshiyuki Seike, Masanori Ohtsubo, Futoshi Shimai, Kenji Maruyama, Hiroyuki Yamamoto, Yoshinori Kobayashi, Keiji Miyachi, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi

Research output: Contribution to journalArticle

Abstract

Semiconductor devices are increasingly sophisticated in their application of three-dimensional laminated chips inside Through-Silicon Via (TSV). TSV is a technology that connects the stacked chips using through electrodes instead of higher integrated circuits densities. In this report, we described the invention of a new photo-resist coating method inside the TSV using the rotary atomizer aerosol spray. The characteristics of the flying droplets from the rotary atomizer aerosol nozzle have been measured by a Shadow Dopper Particle Analyzer (SDPA), and indicated that the new method is capable of coating the photo-resist inside the TSV. Furthermore, we have tried to manufacture the prototype coating system with the rotary atomizer aerosol nozzle and we have run the experiments in to coat the photo-resist inside the TSV Test Element Group (TEG) wafer. Results indicate that this method is able to uniformly coat the photo-resist along the shape of TSV.

Original languageEnglish
Pages (from-to)965-969
Number of pages5
JournalSeimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering
Volume78
Issue number11
DOIs
Publication statusPublished - Nov 2012

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering

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