A study on the scribing of FTO using pulsed Nd=YAG laser

Hee Je Kim; Sung Joon Park; Min Kyu Son; Dong Kil Lee; Kyoung Jun Lee

A study on the scribing of FTO using pulsed Nd=YAG laser

Hee Je Kim, Sung Joon Park, Min Kyu Son, Dong Kil Lee, Kyoung Jun Lee

Molecular Photoconversion Devices Division

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

In material processing, a laser system with optimal laser parameters has been considered to be significant. Especially, the laser scribing technology is thought to be very important for fabricating DSSC(Dye sensitized solar cell) modules with good quality. Moreover, the TEM₀₀ mode laser beam is the most dominant factor to decide the IPCE(Incident photon to current conversion efficiency) characteristics. In order to get the TEM₀₀ mode, a pin-hole is inserted within a simple pulsed Nd:YAG laser resonator. And the spatial field distribution is measured by using three size pin-hole diameters of 2.0, 6.0 mm respectively. At that moment, each case has the same laser beam energy by adjusting the discharge voltage and pps(pulse per second). From those results, it is known that the pin-hole size of 2.0 mm has the perfect TEM ₀₀ mode. In addition, at the charging voltage of 1000 V, 10 pps and the feeding speed of 1.11 mm/sec, the SEM photo of FTO(Fluorine-doped tin oxide) thin film layers shows the best scribing trace.

Original language	English
Pages (from-to)	1407-1411
Number of pages	5
Journal	Transactions of the Korean Institute of Electrical Engineers
Volume	57
Issue number	8
Publication status	Published - Aug 2008

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

Fingerprint Dive into the research topics of 'A study on the scribing of FTO using pulsed Nd=YAG laser'. Together they form a unique fingerprint.

Cite this

Kim, H. J., Park, S. J., Son, M. K., Lee, D. K., & Lee, K. J. (2008). A study on the scribing of FTO using pulsed Nd=YAG laser. Transactions of the Korean Institute of Electrical Engineers, 57(8), 1407-1411.

@article{6c6511c542aa4ec7a9b0909a7348647c,

title = "A study on the scribing of FTO using pulsed Nd=YAG laser",

abstract = "In material processing, a laser system with optimal laser parameters has been considered to be significant. Especially, the laser scribing technology is thought to be very important for fabricating DSSC(Dye sensitized solar cell) modules with good quality. Moreover, the TEM00 mode laser beam is the most dominant factor to decide the IPCE(Incident photon to current conversion efficiency) characteristics. In order to get the TEM00 mode, a pin-hole is inserted within a simple pulsed Nd:YAG laser resonator. And the spatial field distribution is measured by using three size pin-hole diameters of 2.0, 6.0 mm respectively. At that moment, each case has the same laser beam energy by adjusting the discharge voltage and pps(pulse per second). From those results, it is known that the pin-hole size of 2.0 mm has the perfect TEM 00 mode. In addition, at the charging voltage of 1000 V, 10 pps and the feeding speed of 1.11 mm/sec, the SEM photo of FTO(Fluorine-doped tin oxide) thin film layers shows the best scribing trace.",

author = "Kim, {Hee Je} and Park, {Sung Joon} and Son, {Min Kyu} and Lee, {Dong Kil} and Lee, {Kyoung Jun}",

year = "2008",

month = aug,

language = "English",

volume = "57",

pages = "1407--1411",

journal = "Transactions of the Korean Institute of Electrical Engineers",

issn = "1975-8359",

publisher = "Korean Institute of Electrical Engineers",

number = "8",

}

TY - JOUR

T1 - A study on the scribing of FTO using pulsed Nd=YAG laser

AU - Kim, Hee Je

AU - Park, Sung Joon

AU - Son, Min Kyu

AU - Lee, Dong Kil

AU - Lee, Kyoung Jun

PY - 2008/8

Y1 - 2008/8

N2 - In material processing, a laser system with optimal laser parameters has been considered to be significant. Especially, the laser scribing technology is thought to be very important for fabricating DSSC(Dye sensitized solar cell) modules with good quality. Moreover, the TEM00 mode laser beam is the most dominant factor to decide the IPCE(Incident photon to current conversion efficiency) characteristics. In order to get the TEM00 mode, a pin-hole is inserted within a simple pulsed Nd:YAG laser resonator. And the spatial field distribution is measured by using three size pin-hole diameters of 2.0, 6.0 mm respectively. At that moment, each case has the same laser beam energy by adjusting the discharge voltage and pps(pulse per second). From those results, it is known that the pin-hole size of 2.0 mm has the perfect TEM 00 mode. In addition, at the charging voltage of 1000 V, 10 pps and the feeding speed of 1.11 mm/sec, the SEM photo of FTO(Fluorine-doped tin oxide) thin film layers shows the best scribing trace.

AB - In material processing, a laser system with optimal laser parameters has been considered to be significant. Especially, the laser scribing technology is thought to be very important for fabricating DSSC(Dye sensitized solar cell) modules with good quality. Moreover, the TEM00 mode laser beam is the most dominant factor to decide the IPCE(Incident photon to current conversion efficiency) characteristics. In order to get the TEM00 mode, a pin-hole is inserted within a simple pulsed Nd:YAG laser resonator. And the spatial field distribution is measured by using three size pin-hole diameters of 2.0, 6.0 mm respectively. At that moment, each case has the same laser beam energy by adjusting the discharge voltage and pps(pulse per second). From those results, it is known that the pin-hole size of 2.0 mm has the perfect TEM 00 mode. In addition, at the charging voltage of 1000 V, 10 pps and the feeding speed of 1.11 mm/sec, the SEM photo of FTO(Fluorine-doped tin oxide) thin film layers shows the best scribing trace.

UR - http://www.scopus.com/inward/record.url?scp=56649086764&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56649086764&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:56649086764

VL - 57

SP - 1407

EP - 1411

JO - Transactions of the Korean Institute of Electrical Engineers

JF - Transactions of the Korean Institute of Electrical Engineers

SN - 1975-8359

IS - 8

ER -