A study on the time evolution of SiH3 surface loss probability on hydrogenated amorphous silicon films in SiH4 rf discharges using infrared diode-laser absorption spectroscopy

Masaharu Shiratani, Hiroharu Kawasaki, Tsuyoshi Fukuzawa, Yukio Watanabe, Yasuo Yamamoto, Shinji Suganuma, Masaru Hori, Toshio Goto

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20 Citations (Scopus)

Abstract

The time evolution of the surface loss probability β of SiH3 on hydrogenated amorphous silicon films at room temperature during and after turning off the discharge is deduced from the time evolution of the spatial profile of the absolute density of SiH3 measured by infrared diode-laser absorption spectroscopy. Two methods are employed to derive the value of β. One of them uses the SiH3 density gradient near electrode surfaces and the other uses the decay of SiH3 density after turning off the discharge. Both methods give a fairly consistent result that β has a constant value of 0.15 during the discharge and the value decreases to 0.03 within about 8 ms of turning off the discharge. The decrease of β after turning off the discharge may be attributed to a decrease in the rate of production of activated surface sites, on which SiH3 radicals are chemisorbed.

Original languageEnglish
Pages (from-to)776-780
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume31
Issue number7
DOIs
Publication statusPublished - Apr 7 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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