A Surge-Free Intelligent Power Device Specific to Automotive High Side Switches

Tsutomu Matsushita, Teruyoshi Mihara, Hiroshi Ikeda, masaki Hirota, Yukitsugu Hirota

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A new type of Intelligent Power Device (IPD), which is suitable for automotive monolithic High Side Switch with high current capability, is presented. An integration of a vertical-power DMOSFET and planar MOS IC devices is performed by the newly developed Junction-Isolation technique using only one epitaxial growth. The isolation voltage of 80 V has been obtained, which is large enough for automotive IPD’s if they are protected against high voltage transients on the battery line. A rugged vertical DMOSFET (VDMOS) has also been developed for this IPD. It has a cellular Zener diode between its source and drain, which prevents the secondary breakdown of parasitic bipolar transistor, and the resulting avalanche capability enhancement is more than an order of magnitude. This VDMOS is used for both output power device and protection device for low-voltage MOS circuitry, which makes the IPD free from any transients in the automobile without the need for external protection.

Original languageEnglish
Pages (from-to)1576-1581
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume38
Issue number7
DOIs
Publication statusPublished - Jan 1 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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