A Unique Solution-Processable n-Type Semiconductor Material Design for High-Performance Organic Field-Effect Transistors

Masashi Mamada, Hidetaka Shima, Yasuhiro Yoneda, Tetsuro Shimano, Natsuko Yamada, Kazuaki Kakita, Toshikazu Machida, Yasuhiro Tanaka, Sei Aotsuka, Daisuke Kumaki, Shizuo Tokito

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

There have been only a limited number of reports on solution-processed n-channel organic thin-film transistor (OTFT) devices with high levels of electrical performance because the material design process for n-type organic semiconductors is relatively difficult compared with p-type semiconductors, and further chemical modification of the functional groups is required. As a result, the development of soluble n-type organic semiconductors with high carrier mobilities has remained a challenge. Our work addresses this by introducing a novel molecular design to realize soluble n-type organic semiconductors with high electron mobilities through the simple substitution of trifluoromethyl or trifluoromethoxy groups at the meta positions to support sufficient solubility, creating suitable LUMO energy levels and high crystallinity. These newly designed benzobis(thiadiazole) (BBT)-based molecules showed electron mobilities as high as 0.61 cm2 V-1 s-1 in solution-processed OTFT devices. As a practical application in printed electronics, we demonstrated an organic complementary inverter circuit with OTFT devices using the developed soluble organic semiconductors. Because of their high solubility level and superior electrical properties compared with common para-substituted derivatives, the utilization of meta substituents is a new strategy for the design of soluble organic semiconductors in the field of OTFT device fabrication.

Original languageEnglish
Pages (from-to)141-147
Number of pages7
JournalChemistry of Materials
Volume27
Issue number1
DOIs
Publication statusPublished - Jan 13 2015

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Organic field effect transistors
Semiconducting organic compounds
Thin film transistors
Semiconductor materials
Electron mobility
Solubility
Thiadiazoles
Carrier mobility
Chemical modification
Electron energy levels
Functional groups
Electric properties
Substitution reactions
Electronic equipment
Derivatives
Fabrication
Molecules
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

A Unique Solution-Processable n-Type Semiconductor Material Design for High-Performance Organic Field-Effect Transistors. / Mamada, Masashi; Shima, Hidetaka; Yoneda, Yasuhiro; Shimano, Tetsuro; Yamada, Natsuko; Kakita, Kazuaki; Machida, Toshikazu; Tanaka, Yasuhiro; Aotsuka, Sei; Kumaki, Daisuke; Tokito, Shizuo.

In: Chemistry of Materials, Vol. 27, No. 1, 13.01.2015, p. 141-147.

Research output: Contribution to journalArticle

Mamada, M, Shima, H, Yoneda, Y, Shimano, T, Yamada, N, Kakita, K, Machida, T, Tanaka, Y, Aotsuka, S, Kumaki, D & Tokito, S 2015, 'A Unique Solution-Processable n-Type Semiconductor Material Design for High-Performance Organic Field-Effect Transistors', Chemistry of Materials, vol. 27, no. 1, pp. 141-147. https://doi.org/10.1021/cm503579m
Mamada, Masashi ; Shima, Hidetaka ; Yoneda, Yasuhiro ; Shimano, Tetsuro ; Yamada, Natsuko ; Kakita, Kazuaki ; Machida, Toshikazu ; Tanaka, Yasuhiro ; Aotsuka, Sei ; Kumaki, Daisuke ; Tokito, Shizuo. / A Unique Solution-Processable n-Type Semiconductor Material Design for High-Performance Organic Field-Effect Transistors. In: Chemistry of Materials. 2015 ; Vol. 27, No. 1. pp. 141-147.
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