A UV light-emitting diode incorporating GaN quantum dots

Tanaka Satoru, Jeong Sik Lee, Peter Ramvall, Hiroaki Okagawa

Research output: Contribution to journalLetter

41 Citations (Scopus)

Abstract

The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x ∼ 0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number8 A
Publication statusPublished - Aug 1 2003
Externally publishedYes

Fingerprint

Ultraviolet radiation
Semiconductor quantum dots
Diodes
light emitting diodes
quantum dots
Electroluminescence
electroluminescence
Light emitting diodes
Luminescence
Photoluminescence
luminescence
injection
photoluminescence
Fabrication
fabrication
evaluation
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

A UV light-emitting diode incorporating GaN quantum dots. / Satoru, Tanaka; Lee, Jeong Sik; Ramvall, Peter; Okagawa, Hiroaki.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 8 A, 01.08.2003.

Research output: Contribution to journalLetter

Satoru, Tanaka ; Lee, Jeong Sik ; Ramvall, Peter ; Okagawa, Hiroaki. / A UV light-emitting diode incorporating GaN quantum dots. In: Japanese Journal of Applied Physics, Part 2: Letters. 2003 ; Vol. 42, No. 8 A.
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