A variable channel-size MOSFET with lightly doped drain structure

Naoki Nakanose, Yutaka Arima, Tanemasa Asano, Yasuhiro Kosasayama, Masashi Ueno, Masafumi Kimata

Research output: Contribution to journalArticle

Abstract

We propose a metal oxide semiconductor field-effect transistor (MOSFET) whose channel size can be modified by applying control voltage. The variable-channel-size MOSFET (VS-MOS) has a control gate between the main gate and the source/drain. The control gate possesses a gap at its end in the active region. Owing to this unique layout, the VS-MOS achieves continuous modulation of effective channel size and can be fabricated using the conventional complementary MOS (CMOS) fabrication process. Results of test device fabrication show that the channel size modulation can be enhanced by employing the lightly doped drain (LDQ) structure. It is also shown that the logic threshold can be controlled in a CMOS inverter composed of the VS-MOS.

Original languageEnglish
Pages (from-to)1763-1767
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - Jan 1 2004
Externally publishedYes

Fingerprint

MOSFET devices
metal oxide semiconductors
field effect transistors
Modulation
Threshold logic
Fabrication
Voltage control
threshold logic
modulation
fabrication
layouts
electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

A variable channel-size MOSFET with lightly doped drain structure. / Nakanose, Naoki; Arima, Yutaka; Asano, Tanemasa; Kosasayama, Yasuhiro; Ueno, Masashi; Kimata, Masafumi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 01.01.2004, p. 1763-1767.

Research output: Contribution to journalArticle

Nakanose, Naoki ; Arima, Yutaka ; Asano, Tanemasa ; Kosasayama, Yasuhiro ; Ueno, Masashi ; Kimata, Masafumi. / A variable channel-size MOSFET with lightly doped drain structure. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2004 ; Vol. 43, No. 4 B. pp. 1763-1767.
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