Abstract
We propose a metal oxide semiconductor field-effect transistor (MOSFET) whose channel size can be modified by applying control voltage. The variable-channel-size MOSFET (VS-MOS) has a control gate between the main gate and the source/drain. The control gate possesses a gap at its end in the active region. Owing to this unique layout, the VS-MOS achieves continuous modulation of effective channel size and can be fabricated using the conventional complementary MOS (CMOS) fabrication process. Results of test device fabrication show that the channel size modulation can be enhanced by employing the lightly doped drain (LDQ) structure. It is also shown that the logic threshold can be controlled in a CMOS inverter composed of the VS-MOS.
| Original language | English |
|---|---|
| Pages (from-to) | 1763-1767 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - Jan 1 2004 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
A variable channel-size MOSFET with lightly doped drain structure. / Nakanose, Naoki; Arima, Yutaka; Asano, Tanemasa; Kosasayama, Yasuhiro; Ueno, Masashi; Kimata, Masafumi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 01.01.2004, p. 1763-1767.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A variable channel-size MOSFET with lightly doped drain structure
AU - Nakanose, Naoki
AU - Arima, Yutaka
AU - Asano, Tanemasa
AU - Kosasayama, Yasuhiro
AU - Ueno, Masashi
AU - Kimata, Masafumi
PY - 2004/1/1
Y1 - 2004/1/1
N2 - We propose a metal oxide semiconductor field-effect transistor (MOSFET) whose channel size can be modified by applying control voltage. The variable-channel-size MOSFET (VS-MOS) has a control gate between the main gate and the source/drain. The control gate possesses a gap at its end in the active region. Owing to this unique layout, the VS-MOS achieves continuous modulation of effective channel size and can be fabricated using the conventional complementary MOS (CMOS) fabrication process. Results of test device fabrication show that the channel size modulation can be enhanced by employing the lightly doped drain (LDQ) structure. It is also shown that the logic threshold can be controlled in a CMOS inverter composed of the VS-MOS.
AB - We propose a metal oxide semiconductor field-effect transistor (MOSFET) whose channel size can be modified by applying control voltage. The variable-channel-size MOSFET (VS-MOS) has a control gate between the main gate and the source/drain. The control gate possesses a gap at its end in the active region. Owing to this unique layout, the VS-MOS achieves continuous modulation of effective channel size and can be fabricated using the conventional complementary MOS (CMOS) fabrication process. Results of test device fabrication show that the channel size modulation can be enhanced by employing the lightly doped drain (LDQ) structure. It is also shown that the logic threshold can be controlled in a CMOS inverter composed of the VS-MOS.
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UR - http://www.scopus.com/inward/citedby.url?scp=3142573091&partnerID=8YFLogxK
U2 - 10.1143/JJAP.43.1763
DO - 10.1143/JJAP.43.1763
M3 - Article
AN - SCOPUS:3142573091
VL - 43
SP - 1763
EP - 1767
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -