Ab initio model for GaAs1%xNx chemical beam epitaxy using GaAs(100) surface stability over As2, H2, and N2

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Abstract

A model for the chemical beam epitaxy (CBE) of GaAs1%xNx was previously constructed on the basis of first-principles calculations of (100) surfaces of GaAs with As2 and H2 adsorptions and As/N substitution to simulate As2, H2, and N2 mixed gas conditions. We previously demonstrated that this model can be used to predict the temperature and pressure dependences of the growth behavior in metal-organic chemical vapor deposition (MOCVD). In this paper, we show that little modification is needed to transpose this model to CBE experiments. Our model allows us to predict transition temperatures at which Arrhenius regimes of N2 incorporation are changed. Additionally, an explanation of the trend of resulting regimes is given, which is based on the analysis of surface stability during growth at different temperatures.

Original languageEnglish
Article number060306
JournalJapanese Journal of Applied Physics
Volume56
Issue number6
DOIs
Publication statusPublished - Jun 1 2017

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Chemical beam epitaxy
surface stability
epitaxy
Organic chemicals
pressure dependence
Superconducting transition temperature
metalorganic chemical vapor deposition
Chemical vapor deposition
Substitution reactions
transition temperature
substitutes
trends
Adsorption
Temperature
temperature dependence
adsorption
Metals
Gases
gases
Experiments

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Ab initio model for GaAs1{\%}xNx chemical beam epitaxy using GaAs(100) surface stability over As2, H2, and N2",
abstract = "A model for the chemical beam epitaxy (CBE) of GaAs1{\%}xNx was previously constructed on the basis of first-principles calculations of (100) surfaces of GaAs with As2 and H2 adsorptions and As/N substitution to simulate As2, H2, and N2 mixed gas conditions. We previously demonstrated that this model can be used to predict the temperature and pressure dependences of the growth behavior in metal-organic chemical vapor deposition (MOCVD). In this paper, we show that little modification is needed to transpose this model to CBE experiments. Our model allows us to predict transition temperatures at which Arrhenius regimes of N2 incorporation are changed. Additionally, an explanation of the trend of resulting regimes is given, which is based on the analysis of surface stability during growth at different temperatures.",
author = "Hubert Valencia and Yoshihiro Kangawa and Koichi Kakimoto",
year = "2017",
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language = "English",
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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
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T1 - Ab initio model for GaAs1%xNx chemical beam epitaxy using GaAs(100) surface stability over As2, H2, and N2

AU - Valencia, Hubert

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

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