Ab initio study of the properties of GaN(0001) surface at MOVPE and HVPE growth conditions

Pawel Kempisty, Pawel Strak, Stanislaw Krukowski

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Density functional theory (DFT) is used to simulate the properties of GaN(0001) surface employing a finite slab with additional modifications of the non-real side by termination with variously charged pseudo-hydrogen atoms. Different terminations change the electric field inside the slab and causes a relative shift of the energy of the surface and band states, which is known as Surface States Stark Effect (SSSE). It is shown that single hydrogen atom is barrierlessly adsorbed on GaN(0001) surface in the on-top position. Its adsorption energy strongly depends on the surface coverage by other hydrogen atoms, being above 3 eV and below 1.5 eV for the coverage lower and higher than 0.75 ML, respectively. This large difference is due to the difference of electronic occupation of the surface states. The adsorption energies indicate that hydrogen can be stably attached to the surface up to 0.75 ML coverage. It is shown that the adsorption energy of molecular hydrogen depends to some degree on the electric field at the surface, i.e. doping in the bulk. The dependence of hydrogen coverage on the pressure in the vapor shows that complete removal of hydrogen from GaN(0001) surface is difficult. Also chemical potential of hydrogen at the surface as a function of its coverage is determined.

Original languageEnglish
Pages (from-to)826-829
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number3-4
DOIs
Publication statusPublished - Mar 1 2012
Externally publishedYes

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hydrogen
hydrogen atoms
adsorption
slabs
electric fields
energy
Stark effect
occupation
vapors
density functional theory
causes
shift
electronics

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Ab initio study of the properties of GaN(0001) surface at MOVPE and HVPE growth conditions. / Kempisty, Pawel; Strak, Pawel; Krukowski, Stanislaw.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 3-4, 01.03.2012, p. 826-829.

Research output: Contribution to journalArticle

@article{02560ef99c8f44f98067cc04520b53e0,
title = "Ab initio study of the properties of GaN(0001) surface at MOVPE and HVPE growth conditions",
abstract = "Density functional theory (DFT) is used to simulate the properties of GaN(0001) surface employing a finite slab with additional modifications of the non-real side by termination with variously charged pseudo-hydrogen atoms. Different terminations change the electric field inside the slab and causes a relative shift of the energy of the surface and band states, which is known as Surface States Stark Effect (SSSE). It is shown that single hydrogen atom is barrierlessly adsorbed on GaN(0001) surface in the on-top position. Its adsorption energy strongly depends on the surface coverage by other hydrogen atoms, being above 3 eV and below 1.5 eV for the coverage lower and higher than 0.75 ML, respectively. This large difference is due to the difference of electronic occupation of the surface states. The adsorption energies indicate that hydrogen can be stably attached to the surface up to 0.75 ML coverage. It is shown that the adsorption energy of molecular hydrogen depends to some degree on the electric field at the surface, i.e. doping in the bulk. The dependence of hydrogen coverage on the pressure in the vapor shows that complete removal of hydrogen from GaN(0001) surface is difficult. Also chemical potential of hydrogen at the surface as a function of its coverage is determined.",
author = "Pawel Kempisty and Pawel Strak and Stanislaw Krukowski",
year = "2012",
month = "3",
day = "1",
doi = "10.1002/pssc.201100498",
language = "English",
volume = "9",
pages = "826--829",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "3-4",

}

TY - JOUR

T1 - Ab initio study of the properties of GaN(0001) surface at MOVPE and HVPE growth conditions

AU - Kempisty, Pawel

AU - Strak, Pawel

AU - Krukowski, Stanislaw

PY - 2012/3/1

Y1 - 2012/3/1

N2 - Density functional theory (DFT) is used to simulate the properties of GaN(0001) surface employing a finite slab with additional modifications of the non-real side by termination with variously charged pseudo-hydrogen atoms. Different terminations change the electric field inside the slab and causes a relative shift of the energy of the surface and band states, which is known as Surface States Stark Effect (SSSE). It is shown that single hydrogen atom is barrierlessly adsorbed on GaN(0001) surface in the on-top position. Its adsorption energy strongly depends on the surface coverage by other hydrogen atoms, being above 3 eV and below 1.5 eV for the coverage lower and higher than 0.75 ML, respectively. This large difference is due to the difference of electronic occupation of the surface states. The adsorption energies indicate that hydrogen can be stably attached to the surface up to 0.75 ML coverage. It is shown that the adsorption energy of molecular hydrogen depends to some degree on the electric field at the surface, i.e. doping in the bulk. The dependence of hydrogen coverage on the pressure in the vapor shows that complete removal of hydrogen from GaN(0001) surface is difficult. Also chemical potential of hydrogen at the surface as a function of its coverage is determined.

AB - Density functional theory (DFT) is used to simulate the properties of GaN(0001) surface employing a finite slab with additional modifications of the non-real side by termination with variously charged pseudo-hydrogen atoms. Different terminations change the electric field inside the slab and causes a relative shift of the energy of the surface and band states, which is known as Surface States Stark Effect (SSSE). It is shown that single hydrogen atom is barrierlessly adsorbed on GaN(0001) surface in the on-top position. Its adsorption energy strongly depends on the surface coverage by other hydrogen atoms, being above 3 eV and below 1.5 eV for the coverage lower and higher than 0.75 ML, respectively. This large difference is due to the difference of electronic occupation of the surface states. The adsorption energies indicate that hydrogen can be stably attached to the surface up to 0.75 ML coverage. It is shown that the adsorption energy of molecular hydrogen depends to some degree on the electric field at the surface, i.e. doping in the bulk. The dependence of hydrogen coverage on the pressure in the vapor shows that complete removal of hydrogen from GaN(0001) surface is difficult. Also chemical potential of hydrogen at the surface as a function of its coverage is determined.

UR - http://www.scopus.com/inward/record.url?scp=84858840566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84858840566&partnerID=8YFLogxK

U2 - 10.1002/pssc.201100498

DO - 10.1002/pssc.201100498

M3 - Article

AN - SCOPUS:84858840566

VL - 9

SP - 826

EP - 829

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 3-4

ER -