Abrikosov vortex memory

Kazunori Miyahara, Masashi Mukaida, Kohji Hohkawa

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A nondestructive readout random access memory (RAM) cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30×60 μm 2 with a 5-μm design rule. Proper memory cell operation is achieved in the so-called 1, -1 mode using the shift saturation effect, which occurs on the shift value characteristics of the sense gate threshold curves as a function of the write currents. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.

Original languageEnglish
Pages (from-to)754-756
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number7
DOIs
Publication statusPublished - Dec 1 1985
Externally publishedYes

Fingerprint

vortices
random access memory
cells
threshold gates
shift
readout
saturation
curves
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Abrikosov vortex memory. / Miyahara, Kazunori; Mukaida, Masashi; Hohkawa, Kohji.

In: Applied Physics Letters, Vol. 47, No. 7, 01.12.1985, p. 754-756.

Research output: Contribution to journalArticle

Miyahara, K, Mukaida, M & Hohkawa, K 1985, 'Abrikosov vortex memory', Applied Physics Letters, vol. 47, no. 7, pp. 754-756. https://doi.org/10.1063/1.96028
Miyahara, Kazunori ; Mukaida, Masashi ; Hohkawa, Kohji. / Abrikosov vortex memory. In: Applied Physics Letters. 1985 ; Vol. 47, No. 7. pp. 754-756.
@article{852002f8d4da4680ac0a884a127faf31,
title = "Abrikosov vortex memory",
abstract = "A nondestructive readout random access memory (RAM) cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30×60 μm 2 with a 5-μm design rule. Proper memory cell operation is achieved in the so-called 1, -1 mode using the shift saturation effect, which occurs on the shift value characteristics of the sense gate threshold curves as a function of the write currents. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.",
author = "Kazunori Miyahara and Masashi Mukaida and Kohji Hohkawa",
year = "1985",
month = "12",
day = "1",
doi = "10.1063/1.96028",
language = "English",
volume = "47",
pages = "754--756",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Abrikosov vortex memory

AU - Miyahara, Kazunori

AU - Mukaida, Masashi

AU - Hohkawa, Kohji

PY - 1985/12/1

Y1 - 1985/12/1

N2 - A nondestructive readout random access memory (RAM) cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30×60 μm 2 with a 5-μm design rule. Proper memory cell operation is achieved in the so-called 1, -1 mode using the shift saturation effect, which occurs on the shift value characteristics of the sense gate threshold curves as a function of the write currents. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.

AB - A nondestructive readout random access memory (RAM) cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30×60 μm 2 with a 5-μm design rule. Proper memory cell operation is achieved in the so-called 1, -1 mode using the shift saturation effect, which occurs on the shift value characteristics of the sense gate threshold curves as a function of the write currents. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.

UR - http://www.scopus.com/inward/record.url?scp=36549101010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549101010&partnerID=8YFLogxK

U2 - 10.1063/1.96028

DO - 10.1063/1.96028

M3 - Article

VL - 47

SP - 754

EP - 756

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -