ABRIKOSOV VORTEX MEMORY WITH IMPROVED SENSITIVITY AND REDUCED WRITE CURRENT LEVELS.

K. Miyahara, Masashi Mukaida, M. Tokumitsu, S. Kubo, K. Hohkawa

Research output: Contribution to journalArticle

Abstract

Abrikosov vortex memory cells have been studied with a view to achieving high vortex sensitivity and low write-current levels. By using an overhang structure, the vortex sensitivity has been increased to several times that of previous cell structure. The distribution of stored vortices were measured, verifying that stored vortices accumulate near the entrance edge of vortex storage (VSR). Using a Lorentz current flowing through the VSR film, the vortices were successfully driven toward the sense gate. Write current levels of less than 6 mA were achieved by using amorphous Mo films with a low pinning force.

Original languageEnglish
JournalIEEE Transactions on Magnetics
VolumeMAG-23
Issue number2
Publication statusPublished - Mar 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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