ABRIKOSOV VORTEX MEMORY WITH NOVEL CELL STRUCTURE.

Kazunori Miyahara, Masashi Mukaida, Kohji Hohkawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A nondestructive readout random access memory cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30 multiplied by 60 mu m**2 with a 5- mu m design rule. Proper memory cell operation is achieved in the so-called 1,-1 mode using the shift saturation effect which occurs on the characteristics of the write currents vs. the shift value of the sense gate threshold curves. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherJapan Soc of Applied Physics
Pages119-122
Number of pages4
ISBN (Print)4930813107
Publication statusPublished - 1985
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Miyahara, K., Mukaida, M., & Hohkawa, K. (1985). ABRIKOSOV VORTEX MEMORY WITH NOVEL CELL STRUCTURE. In Conference on Solid State Devices and Materials (pp. 119-122). Japan Soc of Applied Physics.