TY - GEN
T1 - ABRIKOSOV VORTEX MEMORY WITH NOVEL CELL STRUCTURE.
AU - Miyahara, Kazunori
AU - Mukaida, Masashi
AU - Hohkawa, Kohji
PY - 1985
Y1 - 1985
N2 - A nondestructive readout random access memory cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30 multiplied by 60 mu m**2 with a 5- mu m design rule. Proper memory cell operation is achieved in the so-called 1,-1 mode using the shift saturation effect which occurs on the characteristics of the write currents vs. the shift value of the sense gate threshold curves. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.
AB - A nondestructive readout random access memory cell based on the use of Abrikosov vortices in thin-film type-II superconductors is newly designed and experimentally tested. The cell occupies an area of 30 multiplied by 60 mu m**2 with a 5- mu m design rule. Proper memory cell operation is achieved in the so-called 1,-1 mode using the shift saturation effect which occurs on the characteristics of the write currents vs. the shift value of the sense gate threshold curves. This is the first Abrikosov vortex RAM cell to operate properly. The write current level has been reduced one order of magnitude using a Pb/In/Au film co-evaporated at 90 K for the vortex storage region.
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U2 - 10.7567/ssdm.1985.c-1-6
DO - 10.7567/ssdm.1985.c-1-6
M3 - Conference contribution
AN - SCOPUS:0022184103
SN - 4930813107
SN - 9784930813107
T3 - Conference on Solid State Devices and Materials
SP - 119
EP - 122
BT - Conference on Solid State Devices and Materials
PB - Japan Soc of Applied Physics
ER -