Accurate dry etching technique for germanium waveguide by using CHF3 based inductively coupled plasma

A. S. Idris, H. Jiang, K. Hamamoto

Research output: Contribution to journalArticle

Abstract

A CHF3 inductively coupled plasma (ICP) based dry etching method is proposed for accurate etching of Ge waveguides. CHF3 ICP based dry etching produces excellent anisotropy along with good selectivity with regards to regular polymeric photoresist, which leads to the elimination of under-cut. As a result, an almost vertical sidewall angle of 85° with an etching rate of 190 nm/min was realised with a relatively high selectivity ratio of 5:1 against regular photoresist.

Original languageEnglish
Pages (from-to)1868-1869
Number of pages2
JournalElectronics Letters
Volume52
Issue number22
DOIs
Publication statusPublished - Oct 27 2016

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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